1200 IGNITER Search Results

20N120P

Abstract: IXFN20N120P
Contextual Info: IXFN20N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR20N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

ISOPLUS247

Abstract: IXFR16N120P 16N120P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Contextual Info: IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

Contextual Info: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

IXFR20N120P

Abstract: ISOPLUS247
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V

IXFR26N120P

Abstract: 26N120P ISOPLUS247 nf725
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

20N120P

Contextual Info: VDSS ID25 IXFN20N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

2a245

Abstract: IXTP1N120P IXTA1N120P
Contextual Info: PolarTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1A ≤ 20Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200

OSRAM hmi 1200

Abstract: schiederwerk EVG 12 sachtler netronic 575 BC-1200 schiederwerk EVG 12-12 Osram HMI schiederwerk SA-1200-i3 schiederwerk evg schiederwerk EVG-1200
Contextual Info: Technical Information Metal Halide Lamp No. FO 4642 Edition: 11/04 - subject to change HMI 1200 W/S Supersedes: 02/03 Status: valid „ Product description The OSRAM HMI 1200 W/S is a double-ended metal halide lamp with daylight-like color temperature in compact design. The

HMI ballast* 575

Abstract: sachtler netronic 575 schiederwerk EVG 12 Schiederwerk EVG 12-12 1200w ballast EVG 12 HMI 575 igniter transistor BC 575 bc 575 netronic
Contextual Info: Technical Information Metal Halide Short Arc Lamp No. FO 5166 - subject to change without notice Edition: 02/2005 SharXS HTI 1200 W/D7/60 Supersedes: 11/2004 Status: valid „ Product description The OSRAM SharXS HTI 1200 W/D7/60 is a compact double-ended 'D'

IXTA06N120P

Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA06N120P IXTP06N120P RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A Ω ≤ 34Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

MITRONIC

Abstract: hmi 1200 1200 igniter sachtler may christe zg 10 PE1K2 HMI 575 schiederwerk EVG 12 sachtler netronic 575 netronic
Contextual Info: Technical Information Metal Halide Lamp No. FO 4761 Edition: 11/04 - subject to change HMI 1200 W/GS Supersedes: Edition 08/04 Status: valid „ Product description The OSRAM HMI 1200 W/GS is a double-ended metal halide lamp with shortened electrode gap in pinch seal technology. The

EVG 12

Abstract: HMI ballast* 575 BC-1200 schiederwerk EVG 12-12 Control Gear and Ignitors for Metal Halide Lamp HMI 575 igniter sachtler netronic 575 schiederwerk EVG 12 schiederwerk EVG-1200 hmi 1200
Contextual Info: Technical Information Metal Halide Short Arc Lamp No. FO 5242 - subject to change without notice Edition: 02/2005 SharXS HTI 1200 W/D7/75 Supersedes: 11/2004 Status: valid „ Product description The OSRAM SharXS HTI 1200 W/D7/75 is a compact double-ended 'D'

IXTA06N120P

Abstract: IXTP06N120P 06N120P ixtp06n120 06N120
Contextual Info: IXTA06N120P IXTP06N120P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 34Ω Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous

HMI ballast

Abstract: hansmann electronic ballast electronic ballast MITRONIC hansmann sachtler netronic 575 ballast hmi hmi 1200 hmi 1200 BALLAST HMI 575 igniter PE1K2
Contextual Info: Technical Information No. FO 5280 Edition: 02/06 - Metal Halide Lamp subject to change without notice Supersedes: Edition 04/05 Status: valid HMI 1200 W/SEL Product description The OSRAM HMI 1200 W/SEL is a single ended metal halide lamp with outer jacket. Service life has been extended to 1,000

SE 135

Abstract: HMI 1200 SE 640032 bag turgi 1200 igniter bag turgi SE 15/7U OSRAM hmi 1200 ECG book PFPE12 Line 700-1200 igniter 1125
Contextual Info: Technical Information No. FO 4317 Edition: 04/05 Metal Halide Short Arc Lamp - subject to change HTI 1200 W/SE Supersedes: Edition 02/02 Status: valid „ Product description The OSRAM HTI 1200 W/SE is a single-ended metal halide lamp without outer bulb. The OSRAM “eXtreme Seal” technology enables

xenon hid ballast

Abstract: HMI igniter igniter 1200 igniter HMI 575 igniter HMI igniter 575 HMI ballast* 575 xenon arc lamp ignitor igniter hmi 575 xenon ballast
Contextual Info: CS2800 SERIES HMI Igniter Modules FEATURES • • • • • Bi-polar High Voltage Output Models for 200 W, 575 W, and 1200 W HID lamps Light Weight Compact Size Made in USA HSR family excluding HSR 575/2 of lamps. Consult CSI for more information. TYPICAL APPLICATIONS

HMI 575 igniter

Abstract: xenon lamp igniter xenon igniter HMI ballast HMI igniter HMI ballast* 575 xenon hid ballast igniter hmi 575 igniter igniter hmi
Contextual Info: CS2800 SERIES HMI Igniter Modules FEATURES • • • • • Bi-polar High Voltage Output Models for 200 W, 575 W, and 1200 W HID lamps Light Weight Compact Size Made in USA HSR family excluding HSR 575/2 of lamps. Consult CSI for more information. TYPICAL APPLICATIONS

2R4N120P

Abstract: IXTA2R4N120P IXTH2R4N120P
Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200

26N120P

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXFL30N120P

Abstract: 1200v18a 30N120P
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200

Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A Ω ≤ 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ