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    IXTA06N120P Search Results

    IXTA06N120P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA06N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.6A TO-263 Original PDF 4
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    Littelfuse Inc IXTA06N120P

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    Onlinecomponents.com IXTA06N120P 300
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    Littelfuse Inc IXTA06N120P-TRL

    Ixta06N120P Trl/ T&r; |Littelfuse IXTA06N120P-TRL
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    IXYS Corporation IXTA06N120P

    MOSFETs 0.6 Amps 1200V 32 Rds
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    IXYS Corporation IXTA06N120P-TRL

    MOSFETs IXTA06N120P TRL
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    IXTA06N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTA06N120P

    Abstract: IXTP06N120P diode 028
    Contextual Info: IXTA06N120P IXTP06N120P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 32Ω Ω TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixta06n120pixtp06n120po-26306n120p+204-02-08-bdiode 028 PDF

    IXTA06N120P

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA06N120P IXTP06N120P RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A Ω ≤ 34Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		ixta06n120pixtp06n120po-26306n120p+104-02-08-b PDF

    IXTA06N120P

    Abstract: IXTP06N120P 06N120P ixtp06n120 06N120
    Contextual Info: IXTA06N120P IXTP06N120P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 34Ω Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		ixta06n120pixtp06n120po-26306n120p+304-02-08-bixtp06n12006n120 PDF

    IXTA06N120P

    Contextual Info: PolarTM Power MOSFET IXTA06N120P IXTP06N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 32Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixta06n120pixtp06n120po-26306n120p+104-02-08-b PDF

    IXTA06N120P

    Abstract: IXTA06N120 ixtp06n120p 06N120P IXTP ixtp06n120 06N120
    Contextual Info: Polar VHVTM Power MOSFET IXTA06N120P IXTP06N120P VDSS ID25 RDS on = 1200V = 0.6A ≤ Ω 32Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixta06n120pixtp06n120po-26306n120p+51-08-06-aixta06n120ixtpixtp06n12006n120 PDF

    TIDU873A

    Abstract: ups transformer winding formula
    Contextual Info: TI Designs Leakage Current Measurement Reference Design for Determining Insulation Resistance Design Overview Design Features This TI design provides a reference solution to measure the insulation resistance up to 100 MΩ. The design has an onboard, isolated 500-V DC power


    Original     		tida-00440ina225amc1200csd13202q2+8iso7640fmina333ts5a23157lm5160tlv1117-50lp2985a-50tidu873aups transformer winding formula PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200vixfb30n120pixfl30n120pixfn30n120p+14ixfl32n120pixfn32n120pplus220ixfv110n10ps1200 volt mosfet1000 volt mosfetmosfet 300 volthiperfetixfn38n100sot 227b diode fasttransistor polar2r4n120pixfn44n100pixfb44n100p PDF