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IXTP06N120 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP06N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 600MA TO-220	Original	PDF		4

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IXYS Corporation IXTP06N120P MOSFETs 0.6 Amps 1200V 32 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP06N120P		276			1 $6.89 10 $3.67 100 $3.35 1000 $2.94 10000 $2.94	Buy Now
TTI	IXTP06N120P	Tube			300	1 - 10 - 100 - 1000 $3.33 10000 $3.33	Buy Now
Quest Components	IXTP06N120P		840			1 $2.78 10 $2.78 100 $2.78 1000 $1.15 10000 $1.15	Buy Now
TME	IXTP06N120P				1	1 $6.44 10 $3.77 100 $3.13 1000 $2.61 10000 $2.61	Get Quote
Component Electronics, Inc	IXTP06N120P		10			1 $3.85 10 $3.85 100 $2.88 1000 $2.50 10000 $2.50	Buy Now
Littelfuse Inc IXTP06N120P Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/; \|Littelfuse IXTP06N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTP06N120P	Bulk			300	1 - 10 - 100 - 1000 $2.70 10000 $2.53	Buy Now
RS	IXTP06N120P	Bulk		8 Weeks	50	1 - 10 - 100 $4.26 1000 $4.26 10000 $4.26	Get Quote
Onlinecomponents.com	IXTP06N120P					1 - 10 - 100 $3.57 1000 $2.45 10000 $2.45	Buy Now

IXTP06N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTA06N120P Abstract: IXTP06N120P diode 028 Contextual Info: IXTA06N120P IXTP06N120P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 32Ω Ω TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta06n120p ixtp06n120p o-263 06n120p +204-02-08-b diode 028	PDF
IXTA06N120P Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA06N120P IXTP06N120P RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A Ω ≤ 34Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	ixta06n120p ixtp06n120p o-263 06n120p +104-02-08-b	PDF
IXTA06N120P Abstract: IXTP06N120P 06N120P ixtp06n120 06N120 Contextual Info: IXTA06N120P IXTP06N120P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 34Ω Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	ixta06n120p ixtp06n120p o-263 06n120p +304-02-08-b ixtp06n120 06n120	PDF
IXTA06N120P Contextual Info: PolarTM Power MOSFET IXTA06N120P IXTP06N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 32Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta06n120p ixtp06n120p o-263 06n120p +104-02-08-b	PDF
IXTA06N120P Abstract: IXTA06N120 ixtp06n120p 06N120P IXTP ixtp06n120 06N120 Contextual Info: Polar VHVTM Power MOSFET IXTA06N120P IXTP06N120P VDSS ID25 RDS on = 1200V = 0.6A ≤ Ω 32Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta06n120p ixtp06n120p o-263 06n120p +51-08-06-a ixta06n120 ixtp ixtp06n120 06n120	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF