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IXTP Datasheets (311)

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IXYS

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP01N100	IXYS		Original	PDF	51.37KB	2
IXTP01N100D	IXYS	1000V high voltage MOSFET	Original	PDF	51.37KB	2
IXTP02N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 200MA TO-220	Original	PDF		4
IXTP02N50D	IXYS	500V high voltage MOSFET	Original	PDF	54.42KB	2
IXTP05N100	IXYS	1000V high voltage MOSFET	Original	PDF	69.11KB	2
IXTP05N100M	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 700MA TO-220	Original	PDF		4
IXTP05N100P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 500MA TO-263	Original	PDF		5
IXTP06N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 600MA TO-220	Original	PDF		4
IXTP08N100D2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO220AB	Original	PDF		5
IXTP08N100P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-220	Original	PDF		4
IXTP08N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 800MA TO-220	Original	PDF		4
IXTP08N50D2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 800MA TO220AB	Original	PDF		5
IXTP100N04T2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-220	Original	PDF		6
IXTP100N15X4	IXYS	MOSFET N-CH 150V 100A TO220	Original	PDF	246.82KB

IXTP102N15T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-220	Original	PDF		7
IXTP10N60P	IXYS	PolarHV Power MOSFET	Original	PDF	137.22KB	4
IXTP10N60PM	IXYS	PolarHV Power MOSFET	Original	PDF	50.2KB	2
IXTP10P15T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 10A TO-220	Original	PDF		6
IXTP10P50P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-220	Original	PDF		6
IXTP110N055P	IXYS	Discrete MOSFETs: Standard N-channel Types	Original	PDF	591.98KB	5

...

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Littelfuse Inc


Littelfuse Inc IXTP6N50D2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXTP6N50D2		600			1 - 10 - 100 $7.35 1000 $7.04 10000 $7.00	Buy Now
Littelfuse Inc IXTP08N50D2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXTP08N50D2		500			1 - 10 - 100 $1.61 1000 $1.34 10000 $1.14	Buy Now
Littelfuse Inc IXTP10P50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXTP10P50P		500			1 - 10 - 100 $4.75 1000 $4.29 10000 $4.26	Buy Now
Verical ()	IXTP10P50P		500		50	1 - 10 - 100 $5.81 1000 $5.08 10000 $5.08	Buy Now
	IXTP10P50P		100		50	1 - 10 - 100 $5.49 1000 $5.49 10000 $5.49	Buy Now
	IXTP10P50P		39		1	1 $7.67 10 $7.67 100 $7.67 1000 $7.67 10000 $7.67	Buy Now
	IXTP10P50P		5		2	1 - 10 $4.23 100 $4.23 1000 $4.23 10000 $4.23	Buy Now
Arrow Electronics ()	IXTP10P50P		100	29 Weeks	50	1 - 10 - 100 $5.51 1000 $5.51 10000 $5.51	Buy Now
	IXTP10P50P		39		1	1 $7.67 10 $7.67 100 $7.67 1000 $7.67 10000 $7.67	Buy Now
	IXTP10P50P		5	24 Weeks	1	1 $4.23 10 $4.23 100 $4.23 1000 $4.23 10000 $4.23	Buy Now
Littelfuse Inc IXTP80N075L2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXTP80N075L2		300			1 - 10 - 100 $6.51 1000 $5.88 10000 $5.85	Buy Now
Newark	IXTP80N075L2	Bulk	3		1	1 $11.60 10 $7.97 100 $5.92 1000 $5.05 10000 $5.05	Buy Now
Littelfuse Inc IXTP26P20P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXTP26P20P		300			1 - 10 - 100 $4.78 1000 $4.07 10000 $3.95	Buy Now
Newark ()	IXTP26P20P	Bulk	300		1	1 $9.83 10 $9.83 100 $5.00 1000 $4.17 10000 $4.08	Buy Now
	IXTP26P20P	Bulk	183		1	1 $7.01 10 $7.01 100 $7.01 1000 $7.01 10000 $7.01	Buy Now
RS	IXTP26P20P	Bulk		8 Weeks	50	1 - 10 - 100 $6.75 1000 $6.75 10000 $6.75	Get Quote

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IXTP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP220N04T2 Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75 Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40	Original	ixta220n04t2 ixtp220n04t2 o-263 o-220 +6220n04t2 04-24-08-c ixtp 220n04t2 220n04 ixtp220 220a-75	PDF
3N120 Abstract: on6017 IXTP3N120 Contextual Info: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS	Original	3n120 o-220 728b1 123b1 +3065b1 on6017 ixtp3n120	PDF
1n80 Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	o-263 o-252 728b1 1n80	PDF
01N100D Abstract: high voltage mosfet n-channel Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C	Original	01n100d o-220ab high voltage mosfet n-channel	PDF
8N50P Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	8n50p o-263 o-220	PDF
siemens i Abstract: 05N100 Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40	Original	05n100 o-220ab o-263 siemens i	PDF
1N100 Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM	Original	1n100 o-263 o-220ab	PDF
01N100D Abstract: 98809b ON 534 TO252 01N1 Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000	Original	01n100d o-220 405b2 98809b +2on 534 to252 01n1	PDF
5n60p Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	5n60p o-220 o-263 405b2	PDF
IXTQ48N20T Abstract: IXTP48N20T IXTP48N20 48N20 42100I Contextual Info: TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS on ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS	Original	ixta48n20t ixtp48n20t ixtq48n20t o-263 +8o-220ab 062in plastic60 48n20t 2-12-10-a ixtp48n20 48n20 42100i	PDF
IXTY1R6N50D2 Abstract: IXTP1R6N50D2 Contextual Info: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous	Original	ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2 o-252 +3o-220 o-263 o-220ab	PDF
IXTP450P2 Abstract: IXTH450P2 IXTQ450P2 Contextual Info: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings	Original	ixtp450p2 ixtq450p2 ixth450p2 400ns +2o-220ab 338b2	PDF
32P05T Contextual Info: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta32p05t ixtp32p05t o-263 32p05t +11-22-10-a	PDF
36p15 Abstract: IXTP36P15P 3-26-08-B Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS	Original	o-263 ixta36p15p ixtp36p15p ixtq36p15p +5o-220 100ms 36p15p 36p15 3-26-08-b	PDF

52P10p Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS	Original	o-263 ixta52p10p ixth52p10p ixtp52p10p +5ixtq52p10p o-247 o-220 100ms 52p10p	PDF
3n120 Abstract: 3N110 98844 Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	3n120 3n110 o-220 o-263 +198844	PDF
2n60p Abstract: DS99422E Contextual Info: PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 RDS on = 500 = 2 ≤ 5.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient	Original	2n60p o-220 ds99422e	PDF
IXTP4N50A Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100 Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T \|~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80	OCR Scan	ixtp4n100a ixtp4n100 ixtp2n100a ixtp2n100 +12ixtp4n95a ixtp4n95 ixtp2n95a ixtp2n95 ixtp4n90a ixtp4n90 ixtp4n50a ixth12n45a ixtp3n80a ixtp3n90a ixth15n45a irfp460	PDF
180N055T Contextual Info: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	180n055t o-220	PDF
Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +108n100p	PDF
Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixta1r4n100p ixtp1r4n100p ixty1r4n100p o-263 +11r4n100p	PDF
Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	12n50p o-263 o-220	PDF
IXTA90N055T2 Abstract: *9956b IXTY90N055T2 IXTY90N055T Contextual Info: TrenchT2TM Power MOSFETs IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 90A Ω ≤ 8.4mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	ixty90n055t2 ixta90n055t2 ixtp90n055t2 o-252 +5o-263 062in o-220 9956b ixty90n055t	PDF
9N60 Abstract: MOSFET IXYS TO-263 Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 9N60P IXTP 9N60P VDSS ID25 RDS on = 600 V = 9 A Ω = 540 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM	Original	9n60p o-220 o-263 405b2 +29n60 mosfet ixys to-263	PDF

IXTP Search Results

IXTP Datasheets (311)

IXTP Price and Stock

Littelfuse Inc IXTP6N50D2

Littelfuse Inc IXTP08N50D2

Littelfuse Inc IXTP10P50P

Littelfuse Inc IXTP80N075L2

Littelfuse Inc IXTP26P20P

IXTP Datasheets Context Search

IXTP220N04T2

3N120

1n80

01N100D

8N50P

siemens i

1N100

01N100D

5n60p

IXTQ48N20T

IXTY1R6N50D2

IXTP450P2

32P05T

36p15

52P10p

3n120

2n60p

IXTP4N50A

180N055T

IXTA90N055T2

9N60