IXTP Search Results

IXTP220N04T2

Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40

3N120

Abstract: on6017 IXTP3N120
Contextual Info: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS

1n80

Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

01N100D

Abstract: high voltage mosfet n-channel
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C

8N50P

Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

siemens i

Abstract: 05N100
Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40

1N100

Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM

01N100D

Abstract: 98809b ON 534 TO252 01N1
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000

5n60p

Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

IXTQ48N20T

Abstract: IXTP48N20T IXTP48N20 48N20 42100I
Contextual Info: TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS on ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS

IXTY1R6N50D2

Abstract: IXTP1R6N50D2
Contextual Info: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous

IXTP450P2

Abstract: IXTH450P2 IXTQ450P2
Contextual Info: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings

32P05T

Contextual Info: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

36p15

Abstract: IXTP36P15P 3-26-08-B
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS

52P10p

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS

3n120

Abstract: 3N110 98844
Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

2n60p

Abstract: DS99422E
Contextual Info: PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 RDS on = 500 = 2 ≤ 5.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient

IXTP4N50A

Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80

180N055T

Contextual Info: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25

IXTA90N055T2

Abstract: *9956b IXTY90N055T2 IXTY90N055T
Contextual Info: TrenchT2TM Power MOSFETs IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 90A Ω ≤ 8.4mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

9N60

Abstract: MOSFET IXYS TO-263
Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 9N60P IXTP 9N60P VDSS ID25 RDS on = 600 V = 9 A Ω = 540 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM