98844 Search Results

3n120

Abstract: 3N110 98844
Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

8896

Abstract: 8815 k MC68HC08JT8
Contextual Info: MC68HC08JT8 - I Rf [Mohm] I a. U1H/U1L FCR5.0MC5 Ta= 20 Udeg] o 0 Tup¡cal — — Unrftt. CU] U1H B- » _,_ - 1 b. U2H/U2L 1 1 1 O [U] - - - _ —0-—‘ U2H 8 »- — §-— - 0- - e- - § 5 c, Fosc [/] 3 ' -.3 -.5

Contextual Info: July 1992 Semiconductor 100350 Low Power Hex D-Latch General Description Features The 100350 contains six D-type latches with true and com­ plement outputs, a pair of common Enables Ea and Eb , and a common Master Reset (MR). A Q output follows its D input when both Ea and Eb are LOW. When either Ea or Eb

98844

Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

RAS 0510 SUN HOLD

Abstract: sun hold RAS 0510 8255 PPI Chip 8086 PPI 8255 interface with 8086 82C100 F82C100 8255 programmable peripheral interface 7 SEGMENT DISPLAY 8255 and 8088 ic dma 8237 8088 LA 7840
Contextual Info: «sì:ik uuuui»uu: ADVANC E INFORMATION C in ilP S . 82C 100 IB M T P S /2 M odel 3 0 and S u per X T 71 C o m p atib le C hip M 100% PC/XT compatible * • Build IBM PS/2 Model 30 with XT software compatibility Key superset features: EMS control, dual

F82C5087

Abstract: fgt 412 intel 8085 MCS MK5087 sis 5595 motherboard wiring diagram SiS chipset 486 OP7J 82c5087 ibm t30 laptop motherboard diagram motherboard sis 6501
Contextual Info: 82C5087 IBM PC-AT Host SCSI Controller j „ „1_ i • L -'aiaM ieei May, 1991 R E L I M I N A R Y 25 M 5 5 ■■ M u i i r ä V Copyright Notice Copyright 1991, Chips and Technologies, Inc. I ia u v ii hu n Ar>^nmitilar4ne n v i u i w « i iv 'u i v j v

3n120

Abstract: 125OC 3N110 IXTP3N120
Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C