1N80 Search Results

1n80

Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

1n8021

Contextual Info: 1N8021 thru 1N8023 SERIES Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 100 – 200 VOLTS 5 nsec HYPER FAST RECOVERY RECTIFIER Designer’s Data Sheet

Contextual Info: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

Contextual Info: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250°C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

1n80

Abstract: 98822
Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 1N80 IXTP 1N80 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20

Contextual Info: REVERSE RECOVERY IN 5 nsec FLAT 1N8021 - 1N8023 SERIES 1 Amp ▪ 100 - 200 Volts ▪ 5 nsec ▪ Hyper Fast Recovery Rectifier Solid State Devices, Inc. SSDI announces the fastest, most rugged rectifier diodes on the market, the 1N8021 - 1N8023 Series. These diodes are more reliable than the

1N80

Contextual Info: High Voltage MOSFET IXTA 1N80 IXTP 1N80 VDSS ID25 N-Channel Enhancement Mode Avalanche Energy Rated RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

1N80

Abstract: utc 3n80l 3N80 mosfet 10a 800v mosfet 10a 800v high power
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N80 Power MOSFET 1A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum

1N3070

Abstract: FD444 1N809 1n841 1n845 1N837
Contextual Info: DIODES HIGH VOLTAGE SWITCHING DIODES BY DESCENDING BV GLASS PACKAGE •r Bv VOLTS nA @ MIN MAX 1N843 250 1N809 c VF PF *RR ns MAX MAX VO LTS @ VR VO LTS MAX «F mA 100 @ 200 1.0 150 300 DO-7 220 1000 @ 200 1.0 @ 100 300 DO-7 FD400 200 100 @ 150 1.0 @ 400

1N8022

Abstract: 1N802 1n8021
Contextual Info: 1N8021 thru 1N8023 SERIES Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 100 – 200 VOLTS 5 nsec HYPER FAST RECOVERY RECTIFIER Designer’s Data Sheet

Contextual Info: 1N8032-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

1N8024-GA SPICE

Contextual Info: 1N8024-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8024-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155

1N8031-GA SPICE

Abstract: PIN diode SPICE model
Contextual Info: 1N8031-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8031-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155

1N8034-GA SPICE

Contextual Info: 1N8034-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8034-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155

Contextual Info: 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

Contextual Info: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

Contextual Info: 1N8018 - 1N8020 Series 1N8020 Axial Leaded 1N8020SMS Surface Mount Square Tab A Novel 1 amp Void Free Glass Ceramic Nanosize Package 9 nsec Hyper Fast Soft Recovery Nanospeed Rectifier SSDI announces our 9 nsec hyper fast rectifiers, the 1N8018 -1N8020 series. The 1N8020 is a void free glass ceramic encapsulated rectifier that

Contextual Info: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

Contextual Info: 1N8035-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability

1N8026-GA SPICE

Contextual Info: 1N8026-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8026-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155

Contextual Info: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

Contextual Info: 1N8033-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability

1N8028-GA SPICE

Contextual Info: 1N8028-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8028-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155