3N110 Search Results

3n120

Abstract: 3N110 98844
Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

3N120

Abstract: transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP
Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 3N120 3N110 1200 1100 V V VGS

3n120

Abstract: DS99025 125OC 3N110
Contextual Info: High Voltage Power MOSFETs V DSS I D25 VDS on IXTH 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 1200 V = 3A = 4.5 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR

DS99025

Contextual Info: High Voltage Power MOSFETs V DSS I D25 VDS on IXTH 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 1200 V = 3A = 4.5 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR

3n108

Abstract: transistor 3N108
Contextual Info: I I 3N108 3N109 3N110 3N111 HIG H V O L T A G E S IL IC O N E P IT A X IA L J U N C T IO N INTEGRATED CHOPPER TRANSISTOR • L O W LEAKAGE • L O W C eb • L O W rEE sat • H IG H V EE & V EB ELECTRICAL DATA ABSOLUTE MAXIMUM RATING _ p a r a m e t e r _

98844

Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

3n120

Abstract: 125OC 3N110 IXTP3N120
Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: TELED.YNE components 2flE D • öT17tiQ5 NPN/PNP DUAL EMinER CHOPPER BI-POLAR TRANSISTORS DGObS^a 3 T_B I T -3 '7- a 3 3N62 to 3N136 GEOMETRY 460 GEOMETRY 481 3N74-3N76 AVAILABLE AS JANJAN-TXJANTX-V * LOW OFFSET VOUAGE TO 30 mV(PNP)/10mV(NPN) HIGH BV 6 0 VOUS

mxj 20 connector

Abstract: 25PCS MOLEX CONNECTOR mxj 15
Contextual Info: 10 0.55 _ 7 0 h_ RECOM MENDED P.C.BOARD P A T T E R N DIM.(REF.) S E C T ."E - E " (A) — \K il n n u o H — o. . — &- f .48 >iS3 U- - NOTES o .2 ,UNDER : PA , UL94V-0 JSffi (D O . 5 ) ,

Contextual Info: 6 © © © ro F &I5 NOTES . S S ia P f W a c ^ L 'r H , 0 f f i S D - 5 4 3 9 3 - O 2 2 £ # B r r a u RE DETA IL ED DIMENSION, SE E 5 D - 5 4 3 9 3 -0 2 2 . 2 . + B-S3M : 2 0 0 0 I S / U - I L NUMBER OF CONNECTORS : 2 O 0 0 P C S / R E E L 3. U - K © - ^ J i a LEAD TA P E LENGTH

Contextual Info: 10 0.55 T IK V 7 X R RECOMMENDED PX.BOARD PATTERN DIM.(REF. SECT.'E-E" (A) J l n n n In — [l n 32. 28. 26. 22. 8. 6. 4. 2. IO. 8. (4.55) n £ 1.48 6. 28 24 22 8 4 2 IO 8 6 4 2 C B D c > iS 3 3 3 .T 2 9 .T 2T.T 23.T I9.T I7.T 5.7 3.7 MX 9.T T.T 55 460- I572

Contextual Info: 10 1.36 ( 1.36) E -u A ^ 0.35 S A 7 tV g LENGTH TO CONTACT POINT F P CTYA/TcT INSERTION DEPTH OF FRO LENGTH TO CONTACT POINT F P CTTA/TTS INSERTION DEPTH OF FPC W-W « IS S (ODD CKT) v - v SEC T .V -V YSIAI SECT. W-W (EVEN GET) ACTUATOR CONTACT POINT (BOTTOM SIDE)

CQFN

Abstract: 53309-2670
Contextual Info: ° 5 2 4 6 5 ,5 2 5 8 8 v U - X M A T E WITH : 5 2 4 5 5 , 5 2 5 8 8 SHOW *SSH PO SIT IO N FR O M 5 3 3 0 9 -*2 7 t S E R IE S OF W A FE R TO <L OF A D J A C E N T fS 7 'J -S 7 5 5 S > „ THIS PRODUCT IS LEAD FREE OF 5 33 0 9 -« *2 7 / rb_frame_A3_J_ME_S

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: :MM DWG. NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING SD-5220T-06 C/l m n CD LJU Oil EE X r # CD s HI U LTI » ]|D X S4+ Ed 0 •O-ttT 00 _ \ X m _ os S U 0 fflDl S: 51 ; M. 'Ol j e J U J aSjff i □I i . "0 co“° >o m ll£ , T¥ o IS fll % <yi m v. m EH'

Contextual Info: 10 0.55 _ RECOMMENDED P.C.BOARD PA T T E R N DIMARER.) S E C T ." E - E " (A) •b — [ ¥ 0,3 ) u -IT_n _n -0_ CL b ui i—1 - 13 =t .48 >iS3 A- - NOTES 1. 0 .2 PA , UL94V-0

Contextual Info: 10 1 .6 0.85 0.5(N-I) 0.5(N+ |)t0-07 1 .6 0.75±0'05 0.75±0'05 (N O N -A C C U M U LA T IV E ) 0 .5 ' (0.85) 0.5(N- I)* 0.5 0.5* CtCxSE) (P ITC H ) ( 0.3 0. 2) 0 .5 1 v v 0 .5<N- v 0.5 I) 0.5 0.3 2-R0.3 ^ /x /x /x /x /x /x /x M 0.5 + 0 .0 4 0 .3 5 -0 .0 3

3N108

Contextual Info: TYPES 3N108 THRU 3N111 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7211693, M A R C H 1972 H IG H -V O L T A G E D O U B L E -E M IT T E R T R A N S IS T O R S D E S IG N E D FO R LO W -LEVEL, H IG H -SP EE D CHO PPER A P P L IC A T IO N S R E Q U IR IN G V E R Y LOW O F F SE T V O L T A G E

2n3035

Abstract: 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix
Contextual Info: ADDITIONAL TRANSISTORS Item Number Part Number Manufacturer PolarIty Mati. Description Package Style Avalanch Transistors CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 5 SemiconTech See Index See Index See Index See Index NthAmerSemi NPN NPN NPN NPN NPN PNP Si Si

3N111

Abstract: 3N108 3n109 ScansUX7 3N110 44so
Contextual Info: TYPES 3N108 THRU 3N111 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 2 1 1 6 9 3 , M A R C H 1 9 7 2 HIGH-VOLTAGE DOUBLE-EMITTER TRANSISTORS DESIGNED FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS REQUIRING VERY LOW OFFSET VOLTAGE • May be Used in Some Circuits Designed for N-P-N Types by Reversing

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group