01N1 Search Results

01N1 Result Highlights (5)

Part	Manufacturer	Description	Download
RJE73188001N1	Amphenol Communications Solutions	Modular Jack - Right Angle, Input Output Connectors 8P8C, Shield, With LEDs.	PDF
RJE4518801N1	Amphenol Communications Solutions	Modular Jack - 8P8C, Vertical, Cat6, THT, No Panel Stops, Single Port, No Shield, With LEDs	PDF
10145226-1201N11LF	Amphenol Communications Solutions	DDR4 DIMM, Storage and Server Connector, Vertical , Through Hole, 288 Position , 0.85mm (0.033in) Pitch	PDF
10145226-0201N13LF	Amphenol Communications Solutions	DDR4 DIMM, Storage and Server Connector, Vertical , Through Hole, 288 Position , 0.85mm (0.033in) Pitch	PDF
10145226-0201N11LF	Amphenol Communications Solutions	DDR4 DIMM, Storage and Server Connector, Vertical , Through Hole, 288 Position , 0.85mm (0.033in) Pitch	PDF

01N1 Price and Stock

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JRH ELECTRONICS


JRH ELECTRONICS 450HS001N19 CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	450HS001N19	Bulk	51		1	1 $452.73 10 $443.68 100 $426.11 1000 $417.58 10000 $417.58	Buy Now
JRH ELECTRONICS 340HS001N15-5N CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	340HS001N15-5N	Bulk	51		1	1 $1479.27 10 $1449.68 100 $1392.28 1000 $1364.43 10000 $1364.43	Buy Now
JRH ELECTRONICS 463FS001N1004F3 CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	463FS001N1004F3	Bulk	51		1	1 $3327.84 10 $3261.28 100 $3132.14 1000 $3069.49 10000 $3069.49	Buy Now
JRH ELECTRONICS 319HA001N1904-6 SHRINK BOOT ADAPTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	319HA001N1904-6	Bulk	51		1	1 $2168.25 10 $2124.89 100 $2040.74 1000 $1999.92 10000 $1999.92	Buy Now
JRH ELECTRONICS 360AS001N1208M6 CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	360AS001N1208M6	Bulk	51		1	1 $3111.24 10 $3049.02 100 $2928.27 1000 $2869.71 10000 $2869.71	Buy Now

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01N1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
01N100D Abstract: high voltage mosfet n-channel Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C	Original	01N100D O-220AB high voltage mosfet n-channel	PDF
01N100D Abstract: 98809b ON 534 TO252 01N1 Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000	Original	01N100D O-220 405B2 01N100D 98809b ON 534 TO252 01N1	PDF
521 MOSFET Abstract: 01N100 237 521 02 Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20	Original	01N80 100mA 01N100 O-251 O-252 728B1 521 MOSFET 01N100 237 521 02	PDF
01n100 Abstract: 4506v iXTY01N100 Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20	Original	01N100 100mA 728B1 01n100 4506v iXTY01N100	PDF
Contextual Info: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR	OCR Scan	01N80 01N100 O-251	PDF
Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 800 = 1 MΩ V 800 V Continuous ±20 V	Original	01N80 100mA 01N100 O-251 728B1	PDF
Contextual Info: □ IXYS High Voltage MOSFET N-Channel, Enhancement Mode V DSS D DS on ^D25 80 0 V 100 m A 80 Q 1000 V 100 m A 80 Q IX T U 0 1 N 80 IX T U 0 1 N 100 Preliminary data Maximum Ratings 01N80 01N100 Symbol Test Conditions V DSS Td = 25°C to 150°C 800 1000 V	OCR Scan	01N80 01N100 O-251	PDF
01N80 Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode VDSS IXTU 01N80 IXTU 01N100 ID25 RDS on 800 V 100 mA 80 W 1000 V 100 mA 80 W Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS TJ = 25°C to 150°C 800 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	01N80 01N100 01N100 O-251 HDM235	PDF
100N055 Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D Contextual Info: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain	OCR Scan	02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D	PDF
01N100 Abstract: TO-251 weight TO252 rthjc TO-251 Outline Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous	Original	01N100 100mA 01N100 TO-251 weight TO252 rthjc TO-251 Outline	PDF
Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM	Original	01N100 100mA O-251 728B1	PDF
IXTD24P20 Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10 Contextual Info: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M	Original	02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10	PDF
01N100 Abstract: MOSFET 546 TO-251 weight 237 521 02 521 MOSFET Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous	Original	01N100 100mA 728B1 01N100 MOSFET 546 TO-251 weight 237 521 02 521 MOSFET	PDF
Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20	Original	01N100 01N100 100mA O-251 O-252 405B2	PDF

Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	01N100 100mA O-251 O-25nditions,	PDF
Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode V DSS IX T U 0 1 N 8 0 tXTU 0 1 N 10 0 p ^D25 DS on a 800 V 100 m A 80 1000 V 100 m A 80 Q Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 v*D S S ^ = 25°G to 150°C 800 1000 V V« ^ 800	OCR Scan	01N80 01N100 O-251	PDF
01N80 Abstract: 01N100 TO252 rthjc TO-251 Outline Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800	Original	01N80 100mA 01N100 O-251 O-252 01N80 01N100 TO252 rthjc TO-251 Outline	PDF
TMS320LC546A Contextual Info: HEADER LINE 1 FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus 40-Bit Arithmetic Logic Unit ALU	Original	SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A	PDF
912 12B Abstract: FCR16 M30100F3FP cs 46 204 Contextual Info: M30I00F3FP - I FCRI6 . 0M2G Udd= 5 [U l Fig.a~d Ta= 20 Edeg] 0 Tupical o a. U1H/U1L [Ul 7 i . . mu b. U2H/U2L 7 5 3 5 '.3 5 U ?H - , c. Fosc 4 fr R f V V J \V\ VfL , j 8 [U] - I _ 1_ 1_ A L - . A V V V J I I I I I— - -0 - •04 -a -_ 1_ _ 1_ _ 1_ L _ _ 1_ 1_ 1_ 1_ L _ _ 1_ 1_ 1_ I	OCR Scan	M30100F3FP FCR16 912 12B cs 46 204	PDF
TMS320LC546A Abstract: TMS320LC545A Contextual Info: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus	Original	TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A TMS320LC545A	PDF
TMS320LC546A Abstract: TMS320LC545A Contextual Info: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus	Original	TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A TMS320LC545A	PDF
TMS320LC546A Abstract: TMS320LC545A Contextual Info: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus	Original	TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A TMS320LC545A	PDF
TMS320LC546A Abstract: TMS320LC545A Contextual Info: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus	Original	TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A TMS320LC545A	PDF
IFR 740 Abstract: TMS320VC54x C541 C542 LC549 TMS320C541 TMS320C54x, instruction set SPRS039 TMS320LC546A TMS320LC545A Contextual Info: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus	Original	TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit IFR 740 TMS320VC54x C541 C542 LC549 TMS320C541 TMS320C54x, instruction set SPRS039 TMS320LC546A TMS320LC545A	PDF

01N1 Search Results

01N1 Result Highlights (5)

01N1 Price and Stock

JRH ELECTRONICS 450HS001N19

JRH ELECTRONICS 340HS001N15-5N

JRH ELECTRONICS 463FS001N1004F3

JRH ELECTRONICS 319HA001N1904-6

JRH ELECTRONICS 360AS001N1208M6

01N1 Datasheets Context Search

01N100D

01N100D

521 MOSFET

01n100

01N80

100N055

01N100

IXTD24P20

01N100

01N80

TMS320LC546A

912 12B

TMS320LC546A

TMS320LC546A

TMS320LC546A

TMS320LC546A

IFR 740