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    05N100 Search Results

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    05N100 Price and Stock

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    IXYS Corporation IXTU05N100

    MOSFET N-CH 1000V 750MA TO251
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    DigiKey IXTU05N100 Tube 75
    • 1 -
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    • 100 $1.49
    • 1000 $1.49
    • 10000 $1.49
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    IXYS Corporation IXTP05N100M

    MOSFET N-CH 1000V 700MA TO220AB
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    DigiKey IXTP05N100M Tube 1
    • 1 $5.06
    • 10 $5.06
    • 100 $2.40
    • 1000 $1.86
    • 10000 $1.86
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    Mouser Electronics IXTP05N100M 300
    • 1 $5.13
    • 10 $3.40
    • 100 $2.70
    • 1000 $2.06
    • 10000 $1.93
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    TTI IXTP05N100M Tube 300
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    TME IXTP05N100M 1
    • 1 $4.30
    • 10 $3.34
    • 100 $2.31
    • 1000 $2.31
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    Vyrian IXTP05N100M 201
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    IXYS Corporation IXTP05N100P

    MOSFET N-CH 1000V 500MA TO220AB
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    DigiKey IXTP05N100P Tube 50
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    Vyrian IXTP05N100P 1,395
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    Walsin Technology Corporation 0805N100F631CT

    CAP CER 10PF 630V C0G/NP0 0805
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    DigiKey 0805N100F631CT Reel 4,000
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    TME 0805N100F631CT 4,000
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    Walsin Technology Corporation 0805N100K500CT

    CAP CER 10PF 50V C0G/NP0 0805
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    DigiKey 0805N100K500CT Reel 4,000
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    Find more 05N100 price and stock on Findchips.com

    05N100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    siemens i

    Abstract: 05N100
    Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40


    Original     		05N100 O-220AB O-263 siemens i PDF

    high voltage mosfet n-channel

    Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000


    Original     		05N100 750mA O-220AB O-263 high voltage mosfet n-channel PDF

    Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30


    Original     		05N100 O-220AB O-263 PDF

    Contextual Info: Advance Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000


    Original     		05N100 750mA O-263 O-220AB PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF