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    05N100 Search Results

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    Walsin Technology Corporation 0805N100J500CT

    CAP CER 10PF 50V C0G/NP0 0805
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    DigiKey () 0805N100J500CT Cut Tape 1,500 1
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    0805N100J500CT Digi-Reel 1,500 1
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    Mouser Electronics 0805N100J500CT 3,067
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    Newark 0805N100J500CT Cut Tape 2,880 10
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    TME 0805N100J500CT 21,241 1
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    Win Source Electronics 0805N100J500CT 9,800
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    IXYS Corporation IXTA05N100HV

    MOSFET N-CH 1000V 750MA TO263
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    DigiKey IXTA05N100HV Tube 100 1
    • 1 $5.11
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    Mouser Electronics IXTA05N100HV 564
    • 1 $5.01
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    TTI IXTA05N100HV Tube 300
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    TME IXTA05N100HV 290 1
    • 1 $3.79
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    Walsin Technology Corporation 0805N100F101CT

    CAP CER 10PF 100V C0G/NP0 0805
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    DigiKey 0805N100F101CT Reel 4,000
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    Walsin Technology Corporation 0805N100G201CT

    CAP CER 10PF 200V C0G/NP0 0805
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    DigiKey 0805N100G201CT Reel 4,000
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    Walsin Technology Corporation 0805N100G100CT

    CAP CER 10PF 10V C0G/NP0 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0805N100G100CT Reel 4,000
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    05N100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    siemens i

    Abstract: 05N100
    Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40


    Original     		05N100 O-220AB O-263 siemens i PDF

    high voltage mosfet n-channel

    Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000


    Original     		05N100 750mA O-220AB O-263 high voltage mosfet n-channel PDF

    Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30


    Original     		05N100 O-220AB O-263 PDF

    Contextual Info: Advance Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000


    Original     		05N100 750mA O-263 O-220AB PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF