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    TE Connectivity M305N-10000E-010BG

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    Master Electronics M305N-10000E-010BG
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    Avnet Americas M305N-10000E-010BG Bulk 120
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    TE Connectivity M305N-100005-100PG

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    Master Electronics M305N-100005-100PG
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    TE Connectivity M305N-100005-300PG

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    Avnet Americas M305N-100005-300PG Bulk 13 Weeks 120
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    Glenair Inc 390FS005N1004A3

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    Interstate Connecting Components 390FS005N1004A3
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    Powell Electronics 390FS005N1004A3 14 1
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    FDH Electronics 390FS005N1004A3 1
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    Glenair Inc 370SS005N1005L6

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    Avnet Americas 370SS005N1005L6 Bulk 3 Weeks 1
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    Interstate Connecting Components 370SS005N1005L6
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    FDH Electronics 370SS005N1005L6 1
    • 1 $1381.24
    • 10 $1151.03
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    05N100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    siemens i

    Abstract: 05N100
    Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40


    Original     		05n100o-220abo-263siemens i PDF

    high voltage mosfet n-channel

    Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000


    Original     		05n100750mao-220abo-263+1high voltage mosfet n-channel PDF

    Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30


    Original     		05n100o-220abo-263 PDF

    Contextual Info: Advance Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000


    Original     		05n100750mao-263o-220ab PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF