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IXTY1R4N100P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTY1R4N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 1.4A TO-252	Original	PDF		4

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Littelfuse Inc IXTY1R4N100P Mosfet, N-Ch, 1Kv, 1.4A, To-252-3; \|Littelfuse IXTY1R4N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXTY1R4N100P	Bulk			1	1 $2.77 10 $2.77 100 $2.77 1000 $2.77 10000 $2.77	Buy Now
	IXTY1R4N100P	Bulk			350	1 - 10 - 100 - 1000 $1.90 10000 $1.75	Buy Now
RS	IXTY1R4N100P	Bulk		8 Weeks	70	1 - 10 - 100 $2.66 1000 $2.66 10000 $2.66	Get Quote
Onlinecomponents.com	IXTY1R4N100P					1 - 10 - 100 $1.80 1000 $1.62 10000 $1.44	Buy Now
IXYS Corporation IXTY1R4N100P Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTY1R4N100P				1	1 $2.56 10 $2.29 100 $1.83 1000 $1.83 10000 $1.83	Get Quote

IXTY1R4N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixta1r4n100p ixtp1r4n100p ixty1r4n100p o-263 +11r4n100p	PDF
IXTP1R4N100P Abstract: 1R4N100P Contextual Info: PolarTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ 11Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta1r4n100p ixtp1r4n100p ixty1r4n100p o-263 +21r4n100p 3-08-a	PDF
Contextual Info: PolarTM Power MOSFETs VDSS ID25 IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P = 1000V = 1.4A Ω ≤ 11.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixty1r4n100p ixta1r4n100p ixtp1r4n100p o-252 +21r4n100p 3-08-a	PDF
Contextual Info: IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P PolarTM Power MOSFETs VDSS ID25 = 1000V = 1.4A ≤ 11.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixty1r4n100p ixta1r4n100p ixtp1r4n100p o-252 +4o-263 o-220ab 1r4n100p 3-08-a	PDF