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IXTP1R4N100P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP1R4N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 1.4A TO-220	Original	PDF		4

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Littelfuse Inc IXTP1R4N100P Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/; \|Littelfuse IXTP1R4N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTP1R4N100P	Bulk			300	1 - 10 - 100 - 1000 $1.86 10000 $1.75	Buy Now
RS	IXTP1R4N100P	Bulk		8 Weeks	50	1 - 10 - 100 $2.66 1000 $2.66 10000 $2.66	Get Quote
Onlinecomponents.com	IXTP1R4N100P					1 - 10 - 100 $1.80 1000 $1.53 10000 $1.43	Buy Now
Flip Electronics	IXTP1R4N100P		450			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTP1R4N100P Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTP1R4N100P				1	1 $3.34 10 $2.76 100 $2.28 1000 $1.58 10000 $1.58	Get Quote

IXTP1R4N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixta1r4n100p ixtp1r4n100p ixty1r4n100p o-263 +11r4n100p	PDF
IXTP1R4N100P Abstract: 1R4N100P Contextual Info: PolarTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ 11Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta1r4n100p ixtp1r4n100p ixty1r4n100p o-263 +21r4n100p 3-08-a	PDF
Contextual Info: PolarTM Power MOSFETs VDSS ID25 IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P = 1000V = 1.4A Ω ≤ 11.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixty1r4n100p ixta1r4n100p ixtp1r4n100p o-252 +21r4n100p 3-08-a	PDF
Contextual Info: IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P PolarTM Power MOSFETs VDSS ID25 = 1000V = 1.4A ≤ 11.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixty1r4n100p ixta1r4n100p ixtp1r4n100p o-252 +4o-263 o-220ab 1r4n100p 3-08-a	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12dsep30-06br dsep30-12cr ixgp70n33 ixgq90n33 sk0604 ixtp76n075 ixer35n120d1 ixgp70n33tbm-a dh60-18a vbo19 sk0712 ixth1n250	PDF