IXTY1R4N100P Search Results

IXTY1R4N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTY1R4N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 1.4A TO-252	Original	PDF		4

IXTY1R4N100P Price and Stock

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IXYS Corporation IXTY1R4N100P MOSFET N-CH 1000V 1.4A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTY1R4N100P	Tube			350	1 - 10 - 100 - 1000 $1.62 10000 $1.62	Buy Now
Mouser Electronics	IXTY1R4N100P					1 $4.13 10 $2.71 100 $1.86 1000 $1.81 10000 $1.81	Get Quote
TTI	IXTY1R4N100P	Tube			350	1 - 10 - 100 - 1000 $1.66 10000 $1.66	Buy Now
TME	IXTY1R4N100P				1	1 $2.66 10 $2.38 100 $1.90 1000 $1.90 10000 $1.90	Get Quote
Littelfuse Inc IXTY1R4N100P Disc Mosfet N-Ch Std-Polar To-252D/ Tube \|Littelfuse IXTY1R4N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTY1R4N100P	Bulk			350	1 - 10 - 100 $2.18 1000 $1.71 10000 $1.53	Buy Now

IXTY1R4N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P	PDF
IXTP1R4N100P Abstract: 1R4N100P Contextual Info: PolarTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ 11Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P 3-08-A IXTP1R4N100P 1R4N100P	PDF
Contextual Info: PolarTM Power MOSFETs VDSS ID25 IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P = 1000V = 1.4A Ω ≤ 11.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P O-252 1R4N100P 3-08-A	PDF
Contextual Info: IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P PolarTM Power MOSFETs VDSS ID25 = 1000V = 1.4A ≤ 11.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P O-252 O-263 O-220AB 1R4N100P 3-08-A	PDF