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    IXTA1N120P Search Results

    IXTA1N120P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA1N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 1A TO-263 Original PDF 4
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    IXTA1N120P Price and Stock

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    IXYS Corporation IXTA1N120P

    MOSFETs 1 Amps 1200V 20 Rds
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    Mouser Electronics IXTA1N120P
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    TTI IXTA1N120P Tube 300
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    IXYS Corporation IXTA1N120P-TRL

    MOSFETs IXTA1N120P TRL
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    Littelfuse Inc IXTA1N120P

    Mosfet, N-Ch,1.2Kv, 1A, To-263; |Littelfuse IXTA1N120P
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    Littelfuse Inc IXTA1N120P-TRL

    Ixta1N120P Trl/ T&r; |Littelfuse IXTA1N120P-TRL
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    IXTA1N120P-TRL Cut Tape 1
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    IXTA1N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTA1N120P

    Contextual Info: PolarTM Power MOSFETs VDSS ID25 IXTY1N120P IXTA1N120P IXTP1N120P RDS on = 1200V = 1A Ω ≤ 20Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		ixty1n120pixta1n120pixtp1n120po-252+3o-2631n120p1-08-a PDF

    2a245

    Abstract: IXTP1N120P IXTA1N120P
    Contextual Info: PolarTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1A ≤ 20Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200


    Original     		ixta1n120pixtp1n120po-263500ma+41n120pa-2454-01-08-a2a245 PDF

    2a245

    Abstract: IXTP1N120P 1N120P IXTA1N120P
    Contextual Info: Polar VHVTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1.0A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixta1n120pixtp1n120po-2631n120p+2a-2452a245 PDF

    IXTY1N120P

    Abstract: IXTA1N120P
    Contextual Info: IXTY1N120P IXTA1N120P IXTP1N120P PolarTM Power MOSFETs VDSS ID25 RDS on = 1200V = 1A Ω ≤ 20Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		ixty1n120pixta1n120pixtp1n120po-252+3o-263o-2201n120p PDF