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    IXTA1N120P Search Results

    IXTA1N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA1N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 1A TO-263 Original PDF 4
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    IXTA1N120P Price and Stock

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    Littelfuse Inc IXTA1N120P

    MOSFET N-CH 1200V 1A TO263
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    DigiKey IXTA1N120P Tube 478 1
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    Verical IXTA1N120P 600 300
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    IXYS Corporation IXTA1N120P-TRL

    MOSFET N-CH 1200V 1A TO263
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    DigiKey IXTA1N120P-TRL Reel 800
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    IXYS Corporation IXTA1N120P

    MOSFETs 1 Amps 1200V 20 Rds
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    Mouser Electronics IXTA1N120P 21
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    TTI IXTA1N120P Tube 300 50
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    TME IXTA1N120P 1
    • 1 $5.06
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    Chip 1 Exchange IXTA1N120P 1,300
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    New Advantage Corporation IXTA1N120P 800 1
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    Littelfuse Inc IXTA1N120P-TRL

    Ixta1N120P Trl/ Tr |Littelfuse IXTA1N120P-TRL
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    Newark IXTA1N120P-TRL Reel 800
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    IXTA1N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTA1N120P

    Contextual Info: PolarTM Power MOSFETs VDSS ID25 IXTY1N120P IXTA1N120P IXTP1N120P RDS on = 1200V = 1A Ω ≤ 20Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTY1N120P IXTA1N120P IXTP1N120P O-252 O-263 1N120P 1-08-A IXTA1N120P PDF

    2a245

    Abstract: IXTP1N120P IXTA1N120P
    Contextual Info: PolarTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1A ≤ 20Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200


    Original     		IXTA1N120P IXTP1N120P O-263 500mA 1N120P A-245) 4-01-08-A 2a245 IXTP1N120P IXTA1N120P PDF

    2a245

    Abstract: IXTP1N120P 1N120P IXTA1N120P
    Contextual Info: Polar VHVTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1.0A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA1N120P IXTP1N120P O-263 1N120P A-245 2a245 IXTP1N120P IXTA1N120P PDF

    IXTY1N120P

    Abstract: IXTA1N120P
    Contextual Info: IXTY1N120P IXTA1N120P IXTP1N120P PolarTM Power MOSFETs VDSS ID25 RDS on = 1200V = 1A Ω ≤ 20Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTY1N120P IXTA1N120P IXTP1N120P O-252 O-263 O-220) O-252 O-220 1N120P PDF