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IXTP1N120P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP1N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 1A TO-220	Original	PDF		4

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IXYS Corporation IXTP1N120P MOSFETs 1 Amps 1200V 20 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP1N120P		859			1 $7.03 10 $4.40 100 $3.73 1000 $2.94 10000 $2.94	Buy Now
TTI	IXTP1N120P	Tube			300	1 - 10 - 100 - 1000 $3.22 10000 $3.22	Buy Now
Future Electronics	IXTP1N120P	Tube		19 Weeks	300	1 - 10 - 100 $3.61 1000 $3.48 10000 $3.43	Buy Now
TME	IXTP1N120P				1	1 $6.40 10 $4.11 100 $3.13 1000 $2.60 10000 $2.60	Get Quote
Littelfuse Inc IXTP1N120P Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/; \|Littelfuse IXTP1N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTP1N120P	Bulk			300	1 - 10 - 100 - 1000 $2.98 10000 $2.79	Buy Now
RS	IXTP1N120P	Bulk		8 Weeks	50	1 - 10 - 100 $4.26 1000 $4.26 10000 $4.26	Get Quote
Onlinecomponents.com	IXTP1N120P					1 - 10 - 100 $3.57 1000 $2.45 10000 $2.45	Buy Now

IXTP1N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTA1N120P Contextual Info: PolarTM Power MOSFETs VDSS ID25 IXTY1N120P IXTA1N120P IXTP1N120P RDS on = 1200V = 1A Ω ≤ 20Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixty1n120p ixta1n120p ixtp1n120p o-252 +3o-263 1n120p 1-08-a	PDF
2a245 Abstract: IXTP1N120P IXTA1N120P Contextual Info: PolarTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1A ≤ 20Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200	Original	ixta1n120p ixtp1n120p o-263 500ma +41n120p a-245 4-01-08-a 2a245	PDF
2a245 Abstract: IXTP1N120P 1N120P IXTA1N120P Contextual Info: Polar VHVTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1.0A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta1n120p ixtp1n120p o-263 1n120p +2a-245 2a245	PDF
IXTY1N120P Abstract: IXTA1N120P Contextual Info: IXTY1N120P IXTA1N120P IXTP1N120P PolarTM Power MOSFETs VDSS ID25 RDS on = 1200V = 1A Ω ≤ 20Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixty1n120p ixta1n120p ixtp1n120p o-252 +3o-263 o-220 1n120p	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF