IXFR26N120P Search Results

IXFR26N120P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR26N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 15A ISOPLUS247	Original	PDF		4

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IXYS Corporation IXFR26N120P Trans MOSFET N-CH Si 1.2KV 15A 3-Pin(3+Tab) ISOPLUS 247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFR26N120P		16		2	1 - 10 $50.92 100 $45.70 1000 $45.70 10000 $45.70	Buy Now
Mouser Electronics	IXFR26N120P					1 - 10 - 100 - 1000 $35.08 10000 $35.08	Get Quote
TTI	IXFR26N120P	Tube			300	1 - 10 - 100 - 1000 $35.08 10000 $35.08	Buy Now
Bristol Electronics	IXFR26N120P		17			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	IXFR26N120P		16		1	1 $52.23 10 $41.56 100 $37.29 1000 $37.29 10000 $37.29	Buy Now
Littelfuse Inc IXFR26N120P Discmosfetn-Ch Hiperfet-Polar Isoplus247; \|Littelfuse IXFR26N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFR26N120P	Bulk			300	1 - 10 - 100 - 1000 $34.83 10000 $32.65	Buy Now
RS	IXFR26N120P	Bulk		8 Weeks	30	1 - 10 - 100 $49.88 1000 $49.88 10000 $49.88	Get Quote
Onlinecomponents.com	IXFR26N120P					1 - 10 - 100 $75.26 1000 $26.77 10000 $26.77	Buy Now

IXFR26N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFR26N120P Contextual Info: IXFR26N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = =   1200V 15A  550m 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings	Original	ixfr26n120p 300ns isoplus247 e153432 +226n120p 10-24-11-c	PDF
IXFR26N120P Abstract: 26N120P ISOPLUS247 nf725 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	ixfr26n120p 300ns isoplus247 e153432 +326n120p 3-28-08-b nf725	PDF
26N120P Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfr26n120p 300ns isoplus247 e153432 +226n120p 1-07-a	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR26N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 15A Ω 500mΩ 300ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfr26n120p 300ns isoplus247 e153432 +226n120p 3-28-08-b	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF