IXFR26N120P Search Results

IXFR26N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR26N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 15A ISOPLUS247	Original	PDF		4

IXFR26N120P Price and Stock

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IXYS Corporation IXFR26N120P MOSFET N-CH 1200V 15A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR26N120P	Tube			300	1 - 10 - 100 - 1000 $26.13 10000 $26.13	Buy Now
Mouser Electronics	IXFR26N120P					1 - 10 - 100 - 1000 $31.66 10000 $31.66	Get Quote
Verical	IXFR26N120P		16		2	1 - 10 $52.82 100 $47.40 1000 $47.40 10000 $47.40	Buy Now
Bristol Electronics	IXFR26N120P		17			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXFR26N120P	Tube			300	1 - 10 - 100 - 1000 $25.49 10000 $25.49	Buy Now

TME	IXFR26N120P		16		1	1 $54.20 10 $43.13 100 $38.70 1000 $38.70 10000 $38.70	Buy Now
Chip Stock	IXFR26N120P		3,170			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFR26N120P Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube \|Littelfuse IXFR26N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFR26N120P	Bulk			300	1 - 10 - 100 - 1000 $27.39 10000 $27.39	Buy Now

IXFR26N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFR26N120P Contextual Info: IXFR26N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = =   1200V 15A  550m 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings	Original	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 10-24-11-C IXFR26N120P	PDF
IXFR26N120P Abstract: 26N120P ISOPLUS247 nf725 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 3-28-08-B IXFR26N120P ISOPLUS247 nf725	PDF
26N120P Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 1-07-A	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR26N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 15A Ω 500mΩ 300ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 3-28-08-B	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF