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    IXFK20N120P Search Results

    IXFK20N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFK20N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 20A TO-264 Original PDF 4
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    IXFK20N120P Price and Stock

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    IXYS Corporation IXFK20N120P

    MOSFET N-CH 1200V 20A TO264AA
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    DigiKey IXFK20N120P Tube 3 1
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    Mouser Electronics IXFK20N120P
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    Littelfuse Inc IXFK20N120P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK20N120P
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    Newark IXFK20N120P Bulk 300
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    IXFK20N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK20N120P IXFX20N120P 300ns O-264 PLUS247 20N120P PDF

    Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V


    Original     		IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B PDF

    IXFK20N120P

    Abstract: IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B
    Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B IXFK20N120P IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B PDF