IXFR16N120P Search Results

IXFR16N120P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR16N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A ISOPLUS247	Original	PDF		5

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IXYS Corporation IXFR16N120P Trans MOSFET N-CH Si 1.2KV 9A 3-Pin(3+Tab) ISOPLUS 247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFR16N120P		10		7	1 - 10 $11.66 100 $11.66 1000 $11.66 10000 $11.66	Buy Now
Mouser Electronics	IXFR16N120P					1 - 10 - 100 - 1000 $20.89 10000 $20.89	Get Quote
TTI	IXFR16N120P	Tube			300	1 - 10 - 100 - 1000 $20.56 10000 $20.56	Buy Now
TME	IXFR16N120P		10		1	1 $7.81 10 $7.81 100 $7.81 1000 $7.81 10000 $7.81	Buy Now
Littelfuse Inc IXFR16N120P Discmosfetn-Ch Hiperfet-Polar Isoplus247; \|Littelfuse IXFR16N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFR16N120P	Bulk			300	1 - 10 - 100 - 1000 $19.65 10000 $18.42	Buy Now
RS	IXFR16N120P	Bulk		8 Weeks	30	1 - 10 - 100 $28.14 1000 $25.89 10000 $25.89	Get Quote
Onlinecomponents.com	IXFR16N120P					1 - 10 - 100 $40.09 1000 $14.64 10000 $14.64	Buy Now

IXFR16N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXFR16N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1200V 9A Ω 1.04Ω 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfr16n120p 300ns isoplus247 e153432 +216n120p 9-12-12-b	PDF
Contextual Info: Preliminary Technical Information IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfr16n120p isoplus247 e153432 300ns +116n120p	PDF
Contextual Info: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	ixfr16n120p 300ns isoplus247 e153432 +216n120p 4-03-08-a	PDF
ISOPLUS247 Abstract: IXFR16N120P 16N120P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Contextual Info: IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	ixfr16n120p isoplus247 e153432 300ns +316n120p 4-03-08-a n-channel enhancement mode power mosfet 8a	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF