IXFR20N120P Search Results

IXFR20N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR20N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 13A ISOPLUS247	Original	PDF		4

IXFR20N120P Price and Stock

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IXYS Corporation IXFR20N120P MOSFET N-CH 1200V 13A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR20N120P	Tube			300	1 - 10 - 100 - 1000 $19.58 10000 $19.58	Buy Now
Mouser Electronics	IXFR20N120P					1 - 10 - 100 - 1000 $20.06 10000 $20.06	Get Quote
Verical	IXFR20N120P		30		2	1 - 10 $32.84 100 $29.60 1000 $29.60 10000 $29.60	Buy Now
Bristol Electronics	IXFR20N120P		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXFR20N120P	Tube			300	1 - 10 - 100 - 1000 $19.10 10000 $19.10	Buy Now

TME	IXFR20N120P		30		1	1 $29.74 10 $23.59 100 $21.26 1000 $21.26 10000 $21.26	Buy Now
Littelfuse Inc IXFR20N120P Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube \|Littelfuse IXFR20N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFR20N120P	Bulk			300	1 - 10 - 100 - 1000 $20.52 10000 $20.52	Buy Now

IXFR20N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFR20N120P Abstract: ISOPLUS247 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 04-03-08-B IXFR20N120P ISOPLUS247	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 1-07-A	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR20N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 04-03-08-B	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF