IXFR20N120P Search Results

IXFR20N120P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR20N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 13A ISOPLUS247	Original	PDF		4

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IXYS Corporation IXFR20N120P Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFR20N120P		30		1	1 $28.31 10 $22.46 100 $20.24 1000 $20.24 10000 $20.24	Buy Now
Verical	IXFR20N120P		30		2	1 - 10 $31.44 100 $28.34 1000 $28.34 10000 $28.34	Buy Now
Mouser Electronics	IXFR20N120P					1 - 10 - 100 - 1000 $27.74 10000 $27.74	Get Quote
TTI	IXFR20N120P	Tube			300	1 - 10 - 100 - 1000 $27.31 10000 $27.31	Buy Now
Bristol Electronics	IXFR20N120P		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFR20N120P Discmosfetn-Ch Hiperfet-Polar Isoplus247; \|Littelfuse IXFR20N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFR20N120P	Bulk			300	1 - 10 - 100 - 1000 $26.09 10000 $24.46	Buy Now
RS	IXFR20N120P	Bulk		8 Weeks	30	1 - 10 - 100 $37.37 1000 $37.37 10000 $37.37	Get Quote
Onlinecomponents.com	IXFR20N120P					1 - 10 - 100 $53.26 1000 $19.44 10000 $19.44	Buy Now

IXFR20N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFR20N120P Abstract: ISOPLUS247 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	ixfr20n120p 300ns isoplus247 e153432 +220n120p 04-03-08-b	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfr20n120p 300ns isoplus247 e153432 +220n120p 1-07-a	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR20N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	ixfr20n120p 300ns isoplus247 e153432 +220n120p 04-03-08-b	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF