IXFL30N120P Search Results

IXFL30N120P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFL30N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 18A I5-PAK	Original	PDF		4

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IXYS Corporation


IXYS Corporation IXFL30N120P MOSFETs 30 Amps 1200V 0.35 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFL30N120P					1 $39.90 10 $32.56 100 $28.76 1000 $28.76 10000 $28.76	Get Quote

IXFL30N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	ixfl30n120p 300ns 30n120p 9-20-07-b	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFL30N120P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200	Original	ixfl30n120p 300ns 30n120p 02-12-10-d	PDF
IXFL30N120P Abstract: 1200v18a 30N120P 380m Contextual Info: IXFL30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200	Original	ixfl30n120p 300ns 30n120p 02-12-10-d +21200v18a 380m	PDF
IXFL30N120P Abstract: 1200v18a 30N120P Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200	Original	ixfl30n120p 300ns 30n120p 4-01-08-c +11200v18a	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF