ZETEX DMOS Search Results

Contextual Info: ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling

Contextual Info: bOE D • ^^70570 000712^ 551 « Z E T B ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

ZVP2110

Abstract: ZVP2110A ZVP2110B ZVP2110C ZVP2110E ta f220 ZVP211 F219
Contextual Info: bOE J> • cic 7D57fl 0007^51 5b0 M ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

5b4 sot23-6

Contextual Info: bOE ]> • ^70578 0007^37 bEfl ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP3306 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive

ZVN4206E

Abstract: ZVN4206 zvn4206a ZVN4206C
Contextual Info: bGE D • Ti7057ä G0D7ß77 323 « Z E T B N-channel enhancement mode vertical DMOS FET ZVN4206 ZETEX SEMICONDUCTORS FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: bGE D • WUST* DD07Ô3S *17 4 ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive

Contextual Info: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement­ mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •

Contextual Info: b OE D • ^70576 ZETEX Ü0D7BG7 TGT SEMICONDUCTORS N-channel enhancementmode vertical DMOS FET ZVN 0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance • Low current drive

Contextual Info: bOE D • ^ 7 0 3 7 0 GDG7TG3 245 Wt ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

t5d diode

Abstract: T5D SOT23 zetex zvn2206 package details
Contextual Info: ZETEX SEMICOND UCTORS TSD ^70570 D □DQSbb'i 3 • ZETB 95D 0 5 6 6 9 N-channel enhancement mode vertical DMOS FET ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

IRF621

Abstract: IRF620
Contextual Info: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZVN0545

Abstract: ZVN0545A
Contextual Info: ZETEX SEMICONDUCTORS TSD » T17GS7Û 0DGSL.35 Ô • ZETB 95D 0 5 6 3 5 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

IRF530

Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530
Contextual Info: ZETEX S EMI CONDUCT ORS W D T=] 70S7f i DDDSSSb 1 95D 0 5 5 5 6 IRF530 IRF531 IRF532 IRF533 N-channel enhancement mode vertical DMOS PET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

zvn zetex

Contextual Info: bQE J> m TTTGSTö 0 0 0 7 7 B3 ZETEX N-channel enhancement­ mode vertical DMOS FET 7 Mb SEMICONDUCTORS ZVN 0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

FERRANTI ZS

Abstract: G-260 ZVP0535 ZVP0535L ZVP0S35A ZVP0S35B p0535
Contextual Info: ZETEX SEMICONDUCTORS ^S]> D ^70570 ‘ 0GDS7S7 G • Z E T B 95D 05757 T'31'IS P-channel enhancement mode vertical DMOS FET ZVP0535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

ZVN3310

Abstract: ZVN3310A ZVN3310B ZVN3310F F159
Contextual Info: büE D • T ti?GS7a QODVÔST 3DÔ ■ ZETB — ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN 3310 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance

Ferranti Semiconductors

Contextual Info: ZETEX SEMICONDUCTORS ^5D T •= 70S 7 fi 0GDS703 T • ZETB D 95D 0 5 7 0 3 T-39-H N-channel enhancement mode vertical DMOS FET ZVN3206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability

IRFZ30

Abstract: IRFZ32
Contextual Info: ZETEX ^5» SEMICONDUCTORS n ? DS7Ö 0005544 5 • ZETB D 95D 0 5 5 4 4 -V '3 1 N-channel enhancement mode vertical DMOS FET * IRFZ30 IRFZ32 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability

Contextual Info: Ti7DS7fl GGa?ÔÔS 4TT bOE D ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

ISD 2210

Contextual Info: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZVN3320

Abstract: ZVN3320A ZVN3320F WOS78 ZVN3320B 200v 100mA mosfet
Contextual Info: bGE D • *n7D57fl DDD7flb7 434 ■ Z E T B _ , ZETEX S E M I C O N D U C T O R S N-channel enhancement mode vertical DMOS FET ZVN3320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability •

Contextual Info: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

t5d diode

Contextual Info: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

15 pin dot matrix printer head

Abstract: FXT605 15 pin ic for high power stepper motor Driver led matrix circuits mosfet application solenoid driver motor and printer DIODE TRANSISTOR LOGIC DEVICES hFE is transistor to220 ic led matrix Solenoid Driver Darlington
Contextual Info: Application Note 6 Issue 2 November 1995 The Use of Zetex E-Line Transistors in Motor and Solenoid Functions within Printers Effective Logic to High Current Load Interfacing Neil Chadderton Introduction The majority of modern printers use stepper motors and solenoids for driving