ZVP2110B Search Results

Contextual Info: ZVP2110B Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)100Í I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

ZVP2110

Abstract: ZVP2110A ZVP2110B ZVP2110C ZVP2110E ta f220 ZVP211 F219
Contextual Info: bOE J> • cic 7D57fl 0007^51 5b0 M ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

L50Q

Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50

Contextual Info: SELECTION TABLES TABLE 2: P CHANNEL SM A LL SIGNAL M OSFETS Part B ^ dss *0 IpM / V mA A RpSlonl lD V GS Max. mA V w ^G SIth l number Min. at Ip Ü Max. mA at Pp Package ZVP0545A -4 5 0 -4 5 -0 .4 -1 .5 -4 .5 -1 150 -5 0 -1 0 0.7 E-line ZVP0545B -4 5 0 -1 0 0

ZVP2110L

Abstract: ZVP2110 g291
Contextual Info: T5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY T • C o m p a c t ge om etry • F a s t s w itc h in g sp e e d s • N o s e c o n d a ry b re a k d o w n • E x ce lle n t te m p e ratu re sta b ility • H igh in p u t im p e d a n ce • L o w cu rren t drive

ZVP4105A

Abstract: ZVP4105 ZVP0120A ZVP0120B ZVP0535A ZVP0535B ZVP0540A ZVP0540B ZVP0545A ZVP0545B
Contextual Info: SELECTION TABLES TABLE 2: P-CHANNEL SMALL SIGNAL MOSFETS Part number BV dss -4 5 0 -4 5 0 -4 0 0 -400 -350 -350 -200 -200 -200 -200 -2 0 0 -2 0 0 -100 -100 -1 0 0 -1 0 0 -6 0 -6 0 -6 0 -6 0 -5 0 -4 5 * BS-CECC approved !dm mA A at Max. -4 5 -0 .4 -1 .5 -100 -0 .4 -1 .5

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

ZVN4206E

Abstract: Small Signal MOSFETs FMMT4401 ZVN3320F B558 BSS66 BSS67 BSS79B ZVP2106 FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

VN10LP

Abstract: ZVN4206A ZVN0545A ZVN2106A ZVNL110A ZVN0124A ZVN0124B ZVN0535A ZVN0540A ZVN0540B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part number B V DSS 'd *DM V GS th J V mA A Min. at Max. Pd R DS(on> 'd mA fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10 5 TO-39

Ferranti Semiconductors

Abstract: R5D SOT-23 ZVP2110 ZVP2110L FERRANTI ZVP2110A ZVP2110B G-293 P-Channel FET 100v to92
Contextual Info: ZETEX S E M I C O N D U C T O R S *=17□S 7 Û 0 0 0 5 7 0 3 S • ZETB 95D 0 57 8 5 P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance