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    T2222A Search Results

    T2222A Datasheets (22)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge MMBT2222A
    Shikues Semiconductor Original PDF
    badge MMBT2222A
    Shenzhen Heketai Electronics Co Ltd NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. Original PDF
    badge MMBT2222A
    JCET Group NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. Original PDF
    badge MMBT2222AM
    JCET Group MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications. Original PDF
    badge MMST2222A
    JCET Group NPN transistor in SOT-323 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. Original PDF
    badge MMBT2222A
    CREATEK Microelectronics NPN small signal transistor in SOT-23 package, with 40 V VCEO, 600 mA continuous collector current, 300 mW power dissipation, and DC current gain up to 300, suitable for medium power amplification and switching applications. Original PDF
    badge MMBT2222A 1P
    JCET Group MMBT2222A is an NPN transistor in SOT-23 package, featuring 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and DC current gain from 100 to 300, suitable for general-purpose switching and amplification applications. Original PDF
    badge MMBT2222A-G
    JCET Group MMBT2222A NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. Original PDF
    badge MMBT2222AT
    Shikues Semiconductor Silicon Epitaxial Planar Transistor for switching and amplifier applications Original PDF
    badge MMBT2222AW
    CREATEK Microelectronics Dual NPN small signal transistor in SOT-323 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and transition frequency of 300MHz, suitable for medium power amplification and switching applications. Original PDF
    badge MMBT2222ADW
    CREATEK Microelectronics Dual NPN small signal transistor in SOT-363 package, with 40V VCEO, 600mA collector current, 200mW power dissipation, and transition frequency of 300MHz, suited for medium power amplification and switching applications. Original PDF
    badge MMBT2222A
    Shandong Jingdao Microelectronics Co Ltd NPN transistor in SOT-23 package with 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and transition frequency up to 250MHz, suitable for high-frequency amplification and switching applications. Original PDF
    badge MMDT2222AW
    CREATEK Microelectronics Dual NPN small signal transistor in SOT-363 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. Original PDF
    badge MMBT2222AT
    JCET Group MMBT2222AT is an NPN transistor in a SOT-523 plastic package, featuring a collector-emitter voltage of 40V, collector current of 600mA, DC current gain up to 300, and transition frequency of 300MHz. Original PDF
    badge MMBT2222A
    AK Semiconductor MMBT2222A SOT-23 NPN transistor with 40V VCEO, 600mA continuous collector current, 150°C operating junction temperature, and 300MHz transition frequency in a compact surface-mount package. Original PDF
    badge MMBT2222A
    SLKOR Switching Transistor, VCEO 30-40V, VCBO 60-75V, VEBO 5.0-6.0V, Ic 600mA, PD 225-300mW, RΘJA 417°C/W, TJ -55 to +150°C. Original PDF
    badge MMDT2222A
    JCET Group Dual NPN transistor in SOT-363 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300. Original PDF
    badge PXT2222A
    Shikues Semiconductor Epitaxial planar die construction, Complementary PNP Type available (PXT2907A). Original PDF
    badge PZT2222A
    JCET Group NPN transistor in SOT-223 package with 40V collector-emitter voltage, 600mA continuous collector current, 1W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. Original PDF
    badge MMST2222A
    Shenzhen Heketai Electronics Co Ltd NPN bipolar transistor in SOT-323 surface mount package, with 40V collector-emitter voltage, 600mA collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. Original PDF
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    T2222A Price and Stock

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    Diodes Incorporated MMBT2222A-7-F

    Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 300 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222A-7-F)
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    Avnet Americas MMBT2222A-7-F Tape & Reel 2,868,000 48 Weeks 3,000
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    onsemi MMBT2222ALT3G

    Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222ALT3G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MMBT2222ALT3G Tape & Reel 1,460,000 52 Weeks 10,000
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    Newark () MMBT2222ALT3G Cut Tape 63,681 5
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    MMBT2222ALT3G Tape & Reel 63,681 100
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    MMBT2222ALT3G Cut Tape 12,751 1
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    MMBT2222ALT3G Tape & Reel 12,751 10
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    Avnet Asia MMBT2222ALT3G 52 Weeks 80,000
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    Avnet Silica MMBT2222ALT3G 40,000 53 Weeks 10,000
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    EBV Elektronik MMBT2222ALT3G 220,000 53 Weeks 10,000
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    Master Electronics MMBT2222ALT3G 370,000
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    Win Source Electronics MMBT2222ALT3G 938,380
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    onsemi MMBT2222ALT1G

    Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222ALT1G)
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    Avnet Americas MMBT2222ALT1G Tape & Reel 147,000 52 Weeks 3,000
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    Newark MMBT2222ALT1G Tape & Reel 24,000 3,000
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    Rochester Electronics MMBT2222ALT1G 3,636 1
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    Ameya Holding Limited MMBT2222ALT1G 4,791
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    ComSIT USA MMBT2222ALT1G 60,695
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    NexGen Digital MMBT2222ALT1G 10,931
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    Avnet Asia MMBT2222ALT1G 375,000 52 Weeks 75,000
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    Avnet Silica MMBT2222ALT1G 1,170,000 53 Weeks 3,000
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    EBV Elektronik MMBT2222ALT1G 1,137,000 53 Weeks 3,000
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    Flip Electronics MMBT2222ALT1G 1,954,500
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    Maritex MMBT2222ALT1G 2,373,447 50
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    Master Electronics MMBT2222ALT1G 600,000
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    onsemi SMMBT2222ALT3G

    NPN Bipolar Transistor. ONSSPCTRNSTVU6M5P; - Tape and Reel (Alt: SMMBT2222ALT3G)
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    Avnet Americas SMMBT2222ALT3G Tape & Reel 120,000 52 Weeks 10,000
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    EBV Elektronik SMMBT2222ALT3G 53 Weeks 10,000
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    Flip Electronics SMMBT2222ALT3G 1,505,000
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    Master Electronics SMMBT2222ALT3G 25,000
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    Nexperia PMBT2222A,215

    - Tape and Reel (Alt: PMBT2222A,215)
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    Avnet Americas PMBT2222A,215 Tape & Reel 38,000 53 Weeks, 1 Days 3,000
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    Ameya Holding Limited PMBT2222A,215 107,020
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    Avnet Silica PMBT2222A,215 504,000 32 Weeks 3,000
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    Maritex PMBT2222A,215 62,998 3,000
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