2206B Search Results

RAD-CAB-LMR400-100

Abstract: LMR500 RAD-CAB-LMR600-125 5606124 RAD-CAB-LMR600-150 RAD-CAB-LMR240-10 n CONNECTOR weight RAD-CAB-RG58-10 RG213U
Contextual Info: RAD-ISM Coaxial Antenna Cables Data Sheet 2206B June 2007 All of the accessories needed for installing a wireless system — antennas, adapters, cables, and surge suppression — are available from Phoenix Contact. Please note that every connection between the radio and the antenna causes signal attenuation. The attenuation of a cable is proportional to the cable length; therefore use only as much cable as is absolutely

ECH8631

Contextual Info: ECH8631 注文コード No. N 8 2 7 4 ECH8631 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・複合タイプであり高密度実装可能。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

mosfet High-Speed Switching

Abstract: 77804 ECH8613
Contextual Info: ECH8613 Ordering number : ENN7780 ECH8613 P-Channel Silicon MOSFET High-Speed Switching Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

MARKING FZ

Abstract: ECH8631
Contextual Info: ECH8631 Ordering number : ENN8274 P-Channel Silicon MOSFET ECH8631 General-Purpose Switching Device Applications Features • • • Low ON-resistance. 2.5V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C

ECH8631

Abstract: 2206B
Contextual Info: ECH8631 注文コード No. N 8 2 7 4 三洋半導体データシート N ECH8631 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・複合タイプであり高密度実装可能。

Tf88

Abstract: ECH8608
Contextual Info: ECH8608 注文コード No. N 8 1 7 9 三洋半導体データシート N ECH8608 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに

TA-3570

Abstract: ta3570 ECH8603
Contextual Info: ECH8603 注文コード No. N 7 2 1 8 B 三洋半導体データシート 半導体ニューズ No.N7218A とさしかえてください。 ECH8603 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

ECH8611

Abstract: 12v to 6V 2a
Contextual Info: ECH8611 Ordering number : ENN8127 P-Channel Silicon MOSFET ECH8611 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

CQ220-6BS

Contextual Info: Datasheet F P H fm CQ220-6BS CQ220-6DS CQ220-6MS CQ220-6NS • a e m ic o n u u n o r cwrp* 6 .0 AMP TRIAC 200 THRU 800 VOLTS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-220AB CASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: ECH8616 Ordering number : ENN8191 N-Channel Silicon MOSFET ECH8616 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C

8126-1

Abstract: D2004PE ECH8621
Contextual Info: ECH8621 注文コード No. N 8 1 2 6 三洋半導体データシート N ECH8621 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・LIB 用途に最適。 ・2.5V 駆動。

ECH8612

Contextual Info: ECH8612 Ordering number : ENN8258 N-Channel Silicon MOSFET ECH8612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Best suited for load switches. 1.8V drive. Composite type, facilitating high-density mounting. Specifications

ECH8608

Contextual Info: ECH8608 Ordering number : ENN8179 N-Channel and P-Channel Silicon MOSFETs ECH8608 General-Purpose Switching Device Applications Features • • The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.

RL42

Abstract: 8117 ECH8622 81172
Contextual Info: ECH8622 Ordering number : ENN8117 N-Channel Silicon MOSFET ECH8622 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.

ENN7288B

Abstract: ECH8601 O1002
Contextual Info: ECH8601 Ordering number : ENN7288B N-Channel Silicon MOSFET ECH8601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Suitable for lithim-ion battery use. Drain common specification. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

ECH8621

Contextual Info: ECH8621 Ordering number : ENN8126 N-Channel Silicon MOSFET ECH8621 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.

8117

Abstract: ECH8622 81172
Contextual Info: ECH8622 Ordering number : ENN8117 N-Channel Silicon MOSFET ECH8622 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.

MARKING FZ

Contextual Info: ECH8631 Ordering number : ENN8274 P-Channel Silicon MOSFET ECH8631 General-Purpose Switching Device Applications Features • • • Low ON-resistance. 2.5V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C

ECH8603

Contextual Info: ECH8603 Ordering number : ENN7218B P-Channel Silicon MOSFET ECH8603 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

ECH8616

Contextual Info: ECH8616 Ordering number : ENN8191 N-Channel Silicon MOSFET ECH8616 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C

ECH8608

Contextual Info: ECH8608 注文コード No. N 8 1 7 9 ECH8608 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに

ECH8621

Contextual Info: ECH8621 Ordering number : ENN8126 N-Channel Silicon MOSFET ECH8621 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.