VD F1 SMD Search Results

Contextual Info: COMPUTI NG AND NETWORKING Figure 1. Block Diagram FB IN GND GA1087 R E F C LK G N D F1 FO G ND rrn m m i e i i t i m nr T ES T VD D QO G ND Q1 Q2 X EE E- VD D Phase Detector Q10 VCO 3 15 Divide Logic * 4 , +5, o r +6 [ ¡6 E Output Butlers j , ! Group A

Contextual Info: II s’ !' “ '• '■<: ! I, ! Il W ' j T. I /. I 'j li U 's ! >J o S1 ll , I /V 's . P R E L IM IN A R Y Figure 1. Block Diagram FBIN 'J GA1088 R E F C LK SO F1 FO GND ni nri m m m m rr 11-Output TES T Configurable Clock Buffer VD D QO Features GND * Q1

Contextual Info: ff / il ! r'¡ S E M I C O N D U C T O ! F; , I N C 7 COMPUTING AND NETWORK N G Figure 1. Block Diagram FBIN SI GA1085 R EFC LK SO F1 FO GND i~ñ~i [T5~i 1 9 11~81rn [~t] fr VD D Phase Delectar VDD Q 10 Phase Select VCO OO G ND Q9 E G ND Divide Logic r 4 , -r5, or *6

VD F1 SMD

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

Contextual Info: CHA3656-QAG 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial

60Ghz

Abstract: MGF0915A a4013
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

MGF0919A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

rgk 20/2

Abstract: TS420-B TS420-T
Contextual Info: TS420-B/T  SENSITIVE SCR FEATURES A IT RMS = 4A VDRM/VRRM = 400, 600V, 700V IGT < 200µA SMD PACKAGE A A DESCRIPTION G K The TS420-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology.

rgk 20/2

Abstract: TS820-B TS820-T TS820 ts820b
Contextual Info: TS820-B/T  SENSITIVE SCR FEATURES A IT RMS =8A VDRM/VRRM = 400, 600V, 700V IGT < 200µA SMD PACKAGE A A DESCRIPTION G K K The TS820-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology.

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm

FET K 3728

Abstract: an 17830 IDS800 MGF0915A 4604 smd fet PO 168 GP 703
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

MGF0916A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

D2 DIN 6784

Abstract: ISM2400 VD F1 SMD SMD MARKING CODE V6 03 SMD MARKING CODE V6 smd marking 806 ISM900 MS11 MS21 MS22
Contextual Info: GaAs MMIC CGY 63 Preliminary Data Sheet • • • • • • • • • Broadband Driver Amplifier 800 … 2500 MHz Bluetooth, ISM900, ISM2400 Base Station Driver Amplifier Single Voltage Supply Operating voltage range: 2.7 to 6 V Pout = 20.0 dBm at VD = 3.0 V (CW)

Contextual Info: SMD Varistor OUTLINE DIMENSIONS VR-61F1 2.0 1.5 ±0.2 F1 1N 2.5 ±0.3 Package : 1F ロット記号（例） 品名 クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン 1.2 ±0.3 1.2 ±0.3 0.1±0.1 2.0 ±0.3 0.2 0.9 5.0 ±0.3 単位：mm

mitsubishi 7805

Abstract: 7805 pi MGF0918A 7805 smd
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm

MGF0919A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

MGF0920A

Abstract: IM335 pt 11400
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm

SMD GP 113

Abstract: MGF0921A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm

smd TRANSISTOR code marking 8K

Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
Contextual Info: Honeywell HC6664 8K X 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 M_m Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x106 rad Si02 • Access Time of 25 ns (typical)

4977 gm

Abstract: MGF0919A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

MGF0920A

Abstract: n channel fet k 1118
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm