GALI-4F
Abstract: No abstract text available
Text: MMIC Amplifier GALI-4F+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -15dBm, Temperature = +25°C INPUT POWER = -15dBm, CURRENT = 50mA 16.0 16.0 15.5 - 45°C 15.5 40mA 15.0 +25°C 15.0 50mA 14.5 +85°C 14.5 60mA 14.0 dB
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-15dBm,
GALI-4F
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Untitled
Abstract: No abstract text available
Text: Plug-In LIMITER PLS-2 Typical Performance Data FREQUENCY MHz 100.0 140.0 180.0 220.0 260.0 320.0 360.0 400.0 440.0 480.0 520.0 560.0 600.0 640.0 680.0 740.0 780.0 820.0 860.0 900.0 POWER OUTPUT (15dBm IN) (3 dBm IN) (dBm) -3.51 -3.46 -3.40 -3.34 -3.29 -3.23
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15dBm
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RDF-1245C
Abstract: No abstract text available
Text: GALI-4F Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: GALI-4F Reference Data: RDF-1245C S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -15dBm, Icc = 50mA, Vd = 4.34V @Temperature = +25degC
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RDF-1245C
-15dBm,
25degC
RDF-1245C
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ERA-1
Abstract: era1 ERA-1 MMIC
Text: MMIC Amplifier ERA-1+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -15dBm, Temperature = +25°C INPUT POWER = -15dBm, CURRENT = 40mA 15 15 14 - 45°C 14 32mA 13 +25°C 13 40mA 12 +85°C 12 48mA 11 dB (dB) 11 10 10 9 9
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-15dBm,
ERA-1
era1
ERA-1 MMIC
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MGF0920A
Abstract: IM335 pt 11400
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
t-155
IM335
pt 11400
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AMMC-5620
Abstract: AMMC-5620-W10 AMMC-5620-W50
Text: Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier Data Sheet Features • Frequency Range: 6 - 20 GHz • High Gain: 19 dB Typical • Output Power: 15dBm Typical • Input and Output Return Loss: < -10 dB Chip Size: 1410 x 1010 µm 55.5 x 39.7 mils Chip Size Tolerance:± 10µm (± 0.4 mils)
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AMMC-5620
15dBm
21dB/GHz
AMMC-5620
AMMC-5620-W10
AMMC-5620-W50
5989-0530EN
AMMC-5620-W10
AMMC-5620-W50
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Untitled
Abstract: No abstract text available
Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 875.0MHz Part No: MP06293 Model: TA1350A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD 1. Input Power Level: 15dBm
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MP06293
TA1350A
15dBm
880MHz)
810MHz
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Untitled
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 942.5MHz Part No: MA04236 Model: TA0152A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 15dBm 2. DC voltage: 3V
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MA04236
TA0152A
15dBm
960MHz
800MHz
880MHz
905MHz
-MA04236
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1025MHz filter
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 942.50MHz Part No: MA08476 Model: TA0394A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 15dBm 2. DC voltage: 3V
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50MHz
MA08476
15dBm
TA0394A
960MHz
800MHz
880MHz
905MHz
1025MHz filter
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murata SAW
Abstract: No abstract text available
Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 428.550MHz Part No: MP04692 Model: TA1484A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device 1. Input Power Level: 15dBm
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550MHz
MP04692
TA1484A
15dBm
429www
murata SAW
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InP HBT transistor
Abstract: STA-5063Z AMPLIFIER 5GHZ wifi
Text: STA-5063Z STA-5063Z 3.3GHz to 6.2GHz General Purpose 3.3V 15 dBm Amplifier 3.3GHz to 6.2GHz GENERAL PURPOSE 3.3V 15dBm AMPLIFIER Package: SOT-363, 2.0mmx2.1mm Product Description Features RFMD’s STA-5063Z is a general purpose class A linear amplifier which utilizes
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STA-5063Z
STA-5063Z
15dBm
OT-363,
ItsS110620
DS110620
STA5063ZSQ
InP HBT transistor
AMPLIFIER 5GHZ wifi
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Untitled
Abstract: No abstract text available
Text: Coaxial Power Detector 50Ω - 50dBm to +15dBm, ZX47-50+ 10 - 8000 MHz Features Maximum Ratings O Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power O -40 C to 85 C -55OC to 100OC 5.7V 120mA
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50dBm
15dBm,
-55OC
100OC
120mA
22dBm
ZX47-50+
HN1173
ZX47-50-S+
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Ablebond 74-1
Abstract: No abstract text available
Text: Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier Data Sheet Features • Frequency Range: 6 - 20 GHz • High Gain: 19 dB Typical • Output Power: 15dBm Typical • Input and Output Return Loss: < -10 dB Chip Size: 1410 x 1010 µm 55.5 x 39.7 mils Chip Size Tolerance:± 10µm (± 0.4 mils)
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AMMC-5620
15dBm
21dB/GHz
AMMC-5620
AMMC-5620-W10
AMMC-5620-W50
5989-0530EN
Ablebond 74-1
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5078
Abstract: AE312
Text: E-pHEMT MMIC AE312 Product Features Application • Small size • 5MHz-2655MHz • Higher Gain • Higher linearity • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • -60dBc CSO 135 Channels @ +15dBmV/ch • -80dBc CTB 135 Channels @ +15dBmV/ch
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AE312
5MHz-2655MHz
OT-89
-60dBc
15dBmV/ch
-80dBc
-83dBc
OT-89
5078
AE312
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MGF0920A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
June/2004
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ta018
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 881.5MHz Part No: MA05687 Model: TA0184A Rev No: 3 A. MAXIMUM RATING: 1. Input Power Level: 15dBm 2. DC voltage: -5 ~ +5V
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MA05687
TA0184A
15dBm
894MHz
894MHz
840MHz
851MHz
924MHz
950MHz
ta018
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Untitled
Abstract: No abstract text available
Text: Mixers The content of this specification may change without notification 7/01/09 Mixers Plug- in A1 Level 23 0.01 to 2500MHz +23dBm LO,up to +15dBm RF Freq. Range MHz P/N RF/LO JXWBHP-A-5-500-23 fL-fU 5-500 JXWBHP-A-10-1000-23 Conversion Loss (dB) IF m LO-RF Isolation
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2500MHz
23dBm
15dBm
JXWBHP-A-5-500-23
JXWBHP-A-10-1000-23
JXWBHP-A-100-2500-23
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Untitled
Abstract: No abstract text available
Text: Surface Mount JCIR-4MH+ JCIR-4MH Image Reject Mixer Level 15 LO Power +15dBm 430 to 930 MHz Maximum Ratings OperatingTemperature Features •excellentimagerejection,28dBtyp. •lowconversionloss,7.9dBtyp. •aqueouswashable
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15dBm)
100mW
BG291
2002/95/EC)
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MDB-73H
Abstract: No abstract text available
Text: MMIC Surface Mount Wideband Double Balanced Mixer MDB-73H+ Level 15 LO Power 15dBm 2200-7000 MHz The Big Deal • High L-I Isolation, 46 dB typ • Useable as Up & Down Converter • Small Size 4 x 4 x 1mm CASE STYLE: DG1847 Product Overview MDB-73H+ is an advanced wideband frequency mixer fabricated using InGap HBT technology with integrated LO and RF Baluns. It has repeatable performance making it suitable for volume production. It is
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MDB-73H+
15dBm)
DG1847
MDB-73H
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Untitled
Abstract: No abstract text available
Text: Surface Mount JCIR-4MH+ JCIR-4MH Image Reject Mixer Level 15 LO Power +15dBm 430 to 930 MHz Maximum Ratings Operating Temperature Features • excellent image rejection, 28 dB typ. • low conversion loss, 7.9 dB typ. • aqueous washable • J-leads for excellent solderability & strain relief
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15dBm)
100mW
BG291
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power amplifier 2-18GHZ
Abstract: LMA183 DC TO 18GHZ RF AMPLIFIER MMIC Ablebond
Text: 2-18 GHz MESFET Amplifier Filtronic LMA183 Solid State Features • • • • • • • • • • 5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply
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LMA183
15dBm
2-18GHz
62mmX2
LMA183
18GHz.
power amplifier 2-18GHZ
DC TO 18GHZ RF AMPLIFIER MMIC
Ablebond
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1SV170
Abstract: No abstract text available
Text: SMM-008, -010 100-4000 MHz Low Noise Amplifier Preliminary Data Features - 2.2dB Noise Figure - Excellent VSW R: 1.7:1 Typical - 18dB Gain and 15dBm P1dB - Operates From Single 12V Supply - Low-Cost Surface-Mount Package SMM-010 Pm 0«'iion«tKHi Ground Ground
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SMM-008,
15dBm
-65cto
1SV170
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • Broadband, cascadable gain block AGC control with gate bias Output power, 15dBm, typical V.S.W.R. 2:1 Max Gain flatness ± 0.5dB, typical On chip D.C. blocking capacitors at input and output 2 - 1 8 GHz Typical Performance
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15dBm,
37bflS01
P35-4150
470pF
P35-4150-0
37bfl501
00G013Ã
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0920A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=32dBm TYP. @ f=1,9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
volta164
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