TO63 PACKAGE Search Results

TO63 package

Abstract: NTE71
Contextual Info: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
Contextual Info: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)

SKC25K85

Abstract: ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (HZ) ICBO t0N r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . -5 -10 -15 -20 . . -25

KT827B

Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780

Contextual Info: r le = 30 AMPS DEVICE TYPE VOLTS BV ebo VOLTS P0 @ 100°C WATTS 80 100 150 80 100 80 100 150 80 100 6.0 6.0 6.0 8.0 8.0 TO-63 TO-3 80 80 80 80 TO-3 200 250 PACKAGE BVceo VOLTS 2N4003 TO-63 TO-63 TO-63 TO-63 TO-63 2N5733 2N5734 2N2823 2N2824 2N2825 2N4002 ^XG SR 50020

2SC2128

Abstract: 2N2773 2N3055C
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (HZ) 'CBO t0N r Max Max Max (A) (s) Max (Ohms) 140m 187m 90m 90m 175 140 175 175 175 175 175 140m 175 J 175 J (CE)*at T Oper Package Style (°C)

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

LT082

Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max

LT049

Abstract: LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (HZ) r ICBO Max (A) Max (s) (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . .15 . .

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

KT827A

Abstract: SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A hFE fT ICBO Max Max ton Max on ON) Min (Hz) (A) (a) 97 100 100 100 100 100 100 122 122 125 150 150 175 175 175 175 175 175 175 20 75 30 30 750 10 30 30 20 20 20 20 20 20 30 175

TO82 TRANSISTOR

Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C

Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840

2u 62 diode

Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

2SD797Y

Abstract: 2SD1041 str5 1561-1008 pt2909 1561-1010 IR802
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (HZ) (A) (s) Max (Ohms) 80 80 80 80 80 80 80 80 80 80 175 175 175 175 175 175 175 175 175 200 80 200 V (BR)CEO PD (CE)sat Toper Max (°C)

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

2N2823

Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340
Contextual Info: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts

TO63 package

Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3

diode 2U 66

Abstract: STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U SSP60B STH506 2N3741 MOTOROLA 2sc2317
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT ICBO Max PD ON) Min (Hz) (A) Max r Max (s) (CE)Mt 'oper Max (Ohms) Max (°C) 600m 600m 175 175 140 140 J J J J 140 175 140 140 175 J J J J J Package Style Devices 20 Watts or More, (Cont'd)

2N5940

Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP

2n2771

Abstract: 2N2483
Contextual Info: Search Results Part number search for devices beginning "2N2483" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N2483 NPN TO18 60V 0.05A 80 - 5/1m - 0.36W

JANTX2N5157

Abstract: 2N3445
Contextual Info: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598

TO63 package

Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3

2N2773

Abstract: J175 BUS24A
Contextual Info: POWER SILICON NPN Item Number Part Number Min I C 5 10 15 20 Semicoa PPC Product Solitron See Index Sid St Dvcs See Index See Index Semelab Solitron PPC Product 30 30 30 30 30 30 30 30 30 30 150 150 150 150 160 160 160 175 175 175 10 15 15 20 20 20 20 30