SDT3876 Search Results

2N5744

Abstract: TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102
Contextual Info: Device Type 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 SDT3104 SDT3850 SDT3851 SDT3852 SDT3875 SDT3876 SDT3877 VCEO V 100 60 100 60 100 100 100 40 60 80 100 40 80 40 40 80 40 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 25/75

Contextual Info: SDT3876 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)97 Maximum Operating Temp (øC) I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

2N3789

Abstract: 2N3790 2N3791 2N3792 2N5007 2N5009 2N5290 2N5291 2N5312 SDT7909
Contextual Info: 37 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO I M VO LTA G ES D TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO v hFE M IN . I M A X. V GE V CE s V BE(s) V I V *C A I *B A V A 5.0 5.0 5.0 5.0 .50 .50 1.20 1.20 2.0 2.0 .200 .200 90 90 180 2.0

SDT7201

Abstract: 2N5740 SDT3109 2n5290 2N5737 SDT7612
Contextual Info: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

2N6960

Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Contextual Info: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50

KT827A

Abstract: SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A hFE fT ICBO Max Max ton Max on ON) Min (Hz) (A) (a) 97 100 100 100 100 100 100 122 122 125 150 150 175 175 175 175 175 175 175 20 75 30 30 750 10 30 30 20 20 20 20 20 20 30 175