GSDR10025 Search Results

Contextual Info: GSDR10025 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)15 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: GSDR10025I Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

GSTR120

Abstract: SR10030
Contextual Info: Ic = 15 AMPS DATA DEVICE b v ceo hFE@ Min. le ^CE VOLTS P D@ 100°C WATTS AMPS VOLTS VOLTS AMPS IcBO @ v CB SHEET PG. NO. TYPE PACKAGE VOLTS BVcbo VOLTS GSDR10020 GSDR10025 GSTR12030 GSTR12035 GSTR12040 TO-3 TO-3 TO-3 TO-3 TO-3 200 250 300 350 400 250 300

t03 package transistor pin configuration

Abstract: 2n6655 GSDR10020 xgsr15035-1 XGSR15040 TO3 HEATSINK GSTR6030-I GSTR6035 GSTR6040 GSTR6040-I
Contextual Info: SÛUARE » CO/ GENERAL -A f hD D • fiSEISSÜfl 0001057 60C 01857 GENERAL SEMICONDUCTOR INDUSTRIES, INC. 1 1 I b ■ D N PN Isolated Collector TO-3 ISOLATED COLLECTOR HIGH SPEED, HIGH POWER SWITCHING TRANSISTOR The isolated collector package configuration has been designed for use In switching applications