TO150 Search Results

40HF

Abstract: 60CTTN015
Contextual Info: Bulletin PD-20489 rev. A 02/03 60CTTN015 60 Amp TRENCH SCHOTTKY RECTIFIER Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular waveform PerDevice 60 A VRRM 15 V 1800 A 0.3 V -55 to150 °C This center tap Schottky rectifier has been optimized for low

Contextual Info: PL133-47 Low-Power 2.25V to 3.63V DC to 150MHz 1:4 Fanout Buffer IC FEATURES DESCRIPTION 1:4 LVCMOS output fanout buffer for DC to150MHz Low Additive Phase Jitter of 60fs RMS 8mA Output Drive Strength Low power consumption for portable applications Low input-output delay

Contextual Info: ICS9248-112 Integrated Circuit Systems, Inc. Frequency Generator & Integrated Buffers for Celeron & PII/III Pin Configuration Recommended Application: 810/810E type chipset. Output Features: • 2- CPUs @2.5V, up to 166.5MHz. • 9 - SDRAM @ 3.3V, up to150MHz including

80N50

Contextual Info: nixYs Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 80N50 V DSS 500 V 80 A 48 mQ I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS Tj =25°C to150°C 500 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2

96527

Abstract: 9N80 8n80
Contextual Info: OIXYS VDSS HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 DS on tr r 800V 8A 1.1Q 250ns 800V 9A 0.9ß 250ns TO-247 AD (IXFH) Preliminary data f D(TAB) Symbol Test Conditions v'DSS T j =25°C to150°C

Contextual Info: MegaMOS FET IXTH14N80 VDSS D25 R DS on N-Channel Enhancement Mode Symbol Test Conditions VDSS Tj = 25°C to150°C 800 V T j = 25 °C to 150°C; RG6 = 1 MQ 800 V Continuous ±20 V VGSM Transient ±30 V ^025 Tc = 25°C 14 A Maximum Ratings I™ Tc = 25°C, pulse width limited by TJU

24N10

Contextual Info: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C

BTS 2146

Contextual Info: n ix Y S IGBT IXSH 40N60 Low VCE sat VCES I C25 v CE(sat) 600 V 75 A 2.5 V Short Circuit SOA Capability Symbol Test Conditions V CES T j =25°C to150°C 600 V VCGR T d = 25° C to 150° C; ReE = 1 M£2 600 V VSES Continuous ±20 V vOEM Transient ±30 V 'c25

Contextual Info: nixYS AdvancedTechnical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 340N07 70 V 340 A ^D25 = R — 4 mQ DS on ” t. < 250 ns DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions V DSS T j =25°C to150°C

IXTH35N30

Contextual Info: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2

diode lt 247

Contextual Info: DIXYS HiPerFET Power MOSFETs IXFH 67N10 IXFH 75N10 VDSS ^D25 100 V 100 V 67 A 75 A V DSS Test Conditions ^ Maximum Ratings =25°C to150°C 100 V v DGR T j = 2 5 °C to 1 5 0 °C ; RGS=1 M£2 100 V Vos Continuous i2 0 V VGSM Transient d30 V ^ D25 Tc =25°C

9D140

Contextual Info: IRFP 250 VDSS = 200 V ^D cont = 30 A Standard Power MOSFET R DS,on) = 85 m Q N-Channel Enhancement Mode Symbol Test Conditions V ¥ dss T j =25°C to150°C 200 V v T j = 25°to150°C; RGS= 1 Mi2 200 V < (/> >8 Continuous ¿20 V v Transient 130 V T c =25°C

10100CTF

Abstract: 10100ct 10150ct 10150ctf 10150C HSBR10100CT
Contextual Info: HI-SINCERITY Spec. No. : HE200802 Issued Date : 2008.08.19 Revised Date :2009.11.06 Page No. : 1/4 MICROELECTRONICS CORP. HSBR10100CT Series to HSBR10150CT Series Schottky Barrier Rectifiers Reverse Voltage 100V to150V, Forward Current 10A TO-220AB Features

Contextual Info: MODZ Series 2” Square, 5 Pin OCXO  Oven Controlled Oscillator  Ultra High Stability  SC Crystal  -40°C to 85° Available Frequency Range Frequency Stability Operating Temperature 1.0MHz to150.0MHz ±1ppb to ±50ppb -40°C to 85°C max*

IXFH6N100Q

Contextual Info: DIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Voss V oo „ DS on Test Conditions Maximum Ratings T j =25°C to150°C 1000 V T j = 25°C to 150°C; Ros = 1 M fl 1000 V Continuous ±20 V V os« Transient ±30

50n60

Abstract: 50N50B IXGH50N50B IXGH50N60B
Contextual Info: a ix Y S HiPerFAST IGBT v IXGH/IXGT 50N50B IXGH/IXGT 50N60B CES ; t C 25 500 V : 75 A 600 V : 75 A V C E sa t i t ii 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol < > Maximum Ratings Test C onditions TO-247 AD (IXGH) 50N50 ¡ 50N60 VCES T, = 25QC to150cC

96527

Abstract: e5200
Contextual Info: DIXYS Light Speed IGBT IXGH 22N50C VCES IC 25 V CE(sat)typ ^fi(typ) 500 V 44 A 2.1 V 55 ns P relim inary data sheet Symbol Test Conditions T j = 25cC to150JC T j = 2 5 °C to 1 5 0 °C ;R G Maximum Ratings 1 Mn Continuous Transient ^CM Tc =25°C T c = 90° C

IXTH5N100A

Abstract: gs 1117 ax
Contextual Info: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000

4588d

Abstract: C8750 2814H
Contextual Info: □IXYS IGBT with Diode IXSN 52N60AU1 Short Circuit S O A Capability E é Test Conditions VCES Tj =25°C to150°C 600 V vCGR vGES T.J = 25° C to 150° C;’ RrP = 1 MQ BE 600 A Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc =25°C 80 A Tc =90°C 40 A 160

mq68

Contextual Info: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il

ixys ixtn 79n20

Abstract: IXTN max4458 IXTN79N20
Contextual Info: nixYS MegaMOS FET IXTN 79N20 VDSS = 200 V U = 85 A ^D S on = ^ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =25°C to150°C 200 V v ™ ^ 200 V = 25° C to 150° C i R ^ I O k i l miniBLOC, SOT-227 B 53432 Vos vGSM Continuous

d2s diode

Abstract: IXTH50N20
Contextual Info: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient

264AA

Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
Contextual Info: HiPerFET Power MOSFETs ^D S S IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C

westinghouse DIODES

Abstract: WESTINGHOUSE DIODE 1111111I XC300
Contextual Info: TEC H N IC A L PUBLICATIO N WESTCODE SEMICONDUCTORS 1 D C 300 ISSUE 1 June, 1980 / Ceramic Capsule Silicon Diodes Type C X C 300 650 amperes average: up to1500 volts RATING S Maximum values at 180°C Tj unless stated otherwise SYMBOL C O N DITIO N S RA TIN G