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IXYS Corporation IXFK80N50P Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFK80N50P		10		1	1 $17.92 10 $16.61 100 $16.61 1000 $16.61 10000 $16.61	Buy Now
Mouser Electronics	IXFK80N50P		385			1 $28.60 10 $20.27 100 $17.99 1000 $15.75 10000 $15.75	Buy Now
TTI	IXFK80N50P	Tube			300	1 - 10 - 100 - 1000 $17.14 10000 $17.14	Buy Now
IXYS Corporation IXFX80N50P Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFX80N50P				1	1 $23.63 10 $19.75 100 $18.64 1000 $18.64 10000 $18.64	Get Quote
Mouser Electronics	IXFX80N50P		168			1 $29.62 10 $21.81 100 $21.81 1000 $19.49 10000 $19.49	Buy Now
TTI	IXFX80N50P	Tube			300	1 - 10 - 100 - 1000 $17.52 10000 $17.52	Buy Now
IXYS Corporation IXFR80N50P Transistor: N-MOSFET; unipolar; 500V; 45A; 360W; ISOPLUS247™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFR80N50P				1	1 $23.11 10 $18.36 100 $17.51 1000 $17.51 10000 $17.51	Get Quote
Mouser Electronics	IXFR80N50P					1 $30.25 10 $20.33 100 $20.33 1000 $20.33 10000 $20.33	Get Quote
TTI	IXFR80N50P	Tube			300	1 - 10 - 100 - 1000 $19.59 10000 $19.59	Buy Now
IXYS Corporation IXFN80N50P Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFN80N50P				300	1 - 10 - 100 - 1000 $30.60 10000 $30.60	Get Quote
Mouser Electronics	IXFN80N50P		443			1 $42.87 10 $30.06 100 $30.06 1000 $30.06 10000 $30.06	Buy Now
TTI	IXFN80N50P	Tube			300	1 - 10 - 100 - 1000 $27.47 10000 $27.47	Buy Now
IXYS Corporation IXFN80N50 Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFN80N50				300	1 - 10 - 100 - 1000 $60.91 10000 $60.91	Get Quote
Mouser Electronics	IXFN80N50		283			1 $76.69 10 $59.04 100 $59.04 1000 $59.04 10000 $59.04	Buy Now
TTI	IXFN80N50	Tube			300	1 - 10 - 100 - 1000 $51.58 10000 $51.58	Buy Now
Vyrian	IXFN80N50		720			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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80N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80N50P Abstract: IXFK 80N50P PLUS247 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80n50p o-264 ixfk 80n50p plus247	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500	Original	80n50 ot-227 e153432	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80n50p o-264 plus247	PDF
80N50D Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 = 500 V = 80 A = 48 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80n50 ot-227 e153432 80n50d	PDF
80n50 Abstract: 80N50P ISOPLUS247 4525 GE alize Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C	Original	isoplus247tm 80n50p 80n50 isoplus247 +24525 ge alize	PDF
80n50 Abstract: 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80n50 75n50 ot-227 e153432 +5125oc 728b1 80n50 mosfet ixfn sot227 snc80	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50 100khz 125oc	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80n50 227tm 728b1	PDF
80N50 Contextual Info: nixYs Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 80N50 V DSS 500 V 80 A 48 mQ I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS Tj =25°C to150°C 500 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2	OCR Scan	ixfn80n50 to150 ot-227 e153432 +180n50	PDF
80N50 MOSFET Abstract: 80N50 75N50 SNC80 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80n50 75n50 ot-227 e153432 +3728b1 80n50 mosfet snc80	PDF
80n50 Abstract: 80N50 MOSFET Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50 227tm 728b1 80n50 mosfet	PDF
Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs VDSS = ID25 = RDS on = ≤ trr IXFB 80N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	80n50q 264tm 728b1	PDF
80N50P Abstract: IXFN 80N50P E153432 Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50p ixfn 80n50p e153432	PDF
80N50Q2 Abstract: 0169E 123B16 Contextual Info: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	80n50q2 ot-227 e153432 728b1 +4123b1 065b1 0169e 123b16	PDF

80N50 Abstract: 80N50P IXFN 80N50P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80n50p 80n50 ixfn 80n50p	PDF
80N50P Abstract: IXFK 80N50P 80N50 PLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM	Original	80n50p ixfk 80n50p 80n50 plus247	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	isoplus247tm 80n50p	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	80n50p	PDF
80N50P Abstract: ISOPLUS247 PLUS247 Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	isoplus247tm 80n50p isoplus247 e153432 +2405b2 plus247	PDF
80N50Q2 Abstract: 80n5 IXFB 80N50Q2 Contextual Info: HiPerFETTM Power MOSFETs IXFB 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80n50q2 264tm 065b1 728b1 +3123b1 80n5 ixfb 80n50q2	PDF
80n50 Abstract: 80N50 MOSFET 125OC IXFN80N50 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50 100khz 125oc 80n50 mosfet +1ixfn80n50	PDF
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions	Original	80n50q2 264tm 728b1 123b1 +1065b1	PDF
Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50p ot-227 e153432 405b2	PDF
80N50Q2 Abstract: IXFL80N50Q2 Contextual Info: HiPerFETTM Power MOSFETs IXFL 80N50Q2 VDSS = 500 V ID25 = 64 A Ω RDS on = 66 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80n50q2 405b2 ixfl80n50q2	PDF

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