IXTN Search Results
IXTN Datasheets (37)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IXTN102N65X2 | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 76A X2 SOT-227 | Original | 136.19KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN110N20L2 | IXYS | FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 100A SOT-227 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN120P20T | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 106A SOT-227 | Original | 181.52KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN15N100 | IXYS | N-Channel Enhancement-Mode MegaMOS FET | Scan | 210.71KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN15N100 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 77.08KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN170P10P | IXYS | FETs - Modules, Discrete Semiconductor Products, MOSFET P-CH 100V 170A SOT227 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN17N120L | IXYS | FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 15A SOT-227B | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN200N10L2 | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 178A SOT-227 | Original | 165.52KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN200N10T | IXYS | FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 200A SOT-227 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN210P10T | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 210A SOT-227 | Original | 181.05KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN21N100 | IXYS | 600V high voltage megaMOS FET | Original | 139.16KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN22N100L | IXYS | FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 22A SOT-227 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN240N075L2 | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH | Original | 175.83KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN30N100L | IXYS | Power MOSFETs with Extended FBSOA | Original | 95.86KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN320N10T | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 320A SOT-227B | Original | 162.04KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN32P60P | IXYS | FETs - Modules, Discrete Semiconductor Products, MOSFET P-CH 600V 32A SOT227 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN36N45 | IXYS | Power MOSFET | Scan | 209.6KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN36N45 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 77.08KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN36N50 | IXYS | Power MOSFET | Scan | 209.6KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN36N50 | IXYS | N-Channel Enhancement Mode | Scan | 329.35KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTN Price and Stock
Littelfuse Inc IXTN200N10L2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTN200N10L2 | 300 |
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IXTN200N10L2 | 291 | 1 |
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| IXTN200N10L2 | 20 | 20 |
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IXTN200N10L2 | Bulk | 278 | 1 |
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Littelfuse Inc IXTN170P10P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTN170P10P | 300 |
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IXTN170P10P | 291 | 2 |
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IXTN170P10P | Bulk | 620 | 1 |
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IXTN170P10P | 300 |
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Littelfuse Inc IXTN600N04T2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTN600N04T2 | 300 |
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IXTN600N04T2 | 291 | 2 |
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IXTN600N04T2 | Bulk | 76 | 1 |
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Littelfuse Inc IXTN110N20L2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTN110N20L2 |
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IXTN110N20L2 | Bulk | 8 Weeks | 10 |
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Littelfuse Inc IXTN500N20X4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTN500N20X4 |
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IXTN500N20X4 | 30 | 10 |
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IXTN500N20X4 | 30 | 30 Weeks | 10 |
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IXTN500N20X4 | Bulk | 8 Weeks | 10 |
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IXTN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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1xys
Abstract: IXTN36N50 36N50 E72873 IXTN36N45
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ixtn36n45ixtn36n50cto150ixtn36n+4 | |
IXTN17N120LContextual Info: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C |
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ixtn17n120lot-227e15343217n120l | |
21N100
Abstract: 21N10 ixtw DIXYS IXTN21N100
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21n100o-264cto150ot-227+4 | |
IXTN8N150LContextual Info: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C |
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ixtn8n150lot-227e1534328n15l+1 | |
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Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTN120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings |
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ixtn120p20t300nse153432150nds+1 | |
IXTN17N120LContextual Info: LinearTM Power MOSFET w/ Extended FBSOA IXTN17N120L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V |
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ixtn17n120le153432100ms17n120l+1 | |
ixtn8n150l
Abstract: 013009 ixtn8n
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ixtn8n150lot-227e1534328n15l+3 | |
IXtN200N10
Abstract: IXTN200N10T 200N10T
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ixtn200n10tot-227e153432200n10t+2 | |
IXTN46N50L
Abstract: 1614G
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ixtn46n50lot-227e15343246n50l+2 | |
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Contextual Info: Preliminary Technical Information IXTN120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns G miniBLOC E153432 S S S G Symbol Test Conditions VDSS |
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ixtn120p20t300nse153432120p20t | |
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Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTN170P10P RDS on = = ≤ -100V -170A Ω 12mΩ P-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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ixtn170p10p-100v-170aot-227+4 | |
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Contextual Info: IXTN170P10P PolarPTM Power MOSFET VDSS ID25 RDS on D P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -170A Ω 12mΩ G S S miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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ixtn170p10p-100v-170aot-227+4 | |
1SN10Contextual Info: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs |
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ixtn15n100ot-227e1s3432c2-98+3 | |
diode c248
Abstract: IXTN36N50 C248 diode
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ixtn36n50ot-227e153432c2-50+3 | |
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46N50L
Abstract: IXTN
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46n50l150ocot-227e153432+2 | |
IXTN40P50PContextual Info: PolarPTM Power MOSFET IXTN40P50P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 500V - 40A Ω 230mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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ixtn40p50pot-227e153432100ms+2 | |
ixys ixtn 79n20
Abstract: 79N20 IXTN79N20 ixtn 79n20
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79n20ot-227ixys ixtn 79n20ixtn79n20+1 | |
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Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings |
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ixtn32p60pot-227e1534322500ias+2 | |
IXTN200N10L2
Abstract: 200N10L2 200N1 100A MOSFET ixys IXTN200
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ixtn200n10l2ot-227e153432100ms+4 | |
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Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN17N120L D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ RDS on G S S miniBLOC E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V |
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ixtn17n120le153432100ms17n120l+1 | |
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Contextual Info: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTN210P10T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings |
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ixtn210p10t-100v200nse153432+2 | |
ixys ixtn 36n50
Abstract: 36N50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50
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OCR Scan |
36n5010ki2ot-227e153432+7 | |
IXTN600N04T2Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN600N04T2 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings |
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ixtn600n04t2ot-227e153432600n04t2 | |
IXTN30N100LContextual Info: LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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ixtn30n100le15343230n100l5-07-a | |