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    IXTN Search Results

    IXTN Datasheets (37)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTN102N65X2
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 76A X2 SOT-227 Original PDF 136.19KB
    IXTN110N20L2
    IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 100A SOT-227 Original PDF 5
    IXTN120P20T
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 106A SOT-227 Original PDF 181.52KB
    IXTN15N100
    IXYS N-Channel Enhancement-Mode MegaMOS FET Scan PDF 210.71KB 4
    IXTN15N100
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.08KB 1
    IXTN170P10P
    IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET P-CH 100V 170A SOT227 Original PDF 5
    IXTN17N120L
    IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 15A SOT-227B Original PDF 5
    IXTN200N10L2
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 178A SOT-227 Original PDF 165.52KB
    IXTN200N10T
    IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 200A SOT-227 Original PDF 5
    IXTN210P10T
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 210A SOT-227 Original PDF 181.05KB
    IXTN21N100
    IXYS 600V high voltage megaMOS FET Original PDF 139.16KB 4
    IXTN22N100L
    IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 22A SOT-227 Original PDF 5
    IXTN240N075L2
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF 175.83KB
    IXTN30N100L
    IXYS Power MOSFETs with Extended FBSOA Original PDF 95.86KB 5
    IXTN320N10T
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 320A SOT-227B Original PDF 162.04KB
    IXTN32P60P
    IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET P-CH 600V 32A SOT227 Original PDF 5
    IXTN36N45
    IXYS Power MOSFET Scan PDF 209.6KB 4
    IXTN36N45
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.08KB 1
    IXTN36N50
    IXYS Power MOSFET Scan PDF 209.6KB 4
    IXTN36N50
    IXYS N-Channel Enhancement Mode Scan PDF 329.35KB 4
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    IXTN Price and Stock

    Littelfuse Inc

    Littelfuse Inc IXTN200N10L2

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    Master Electronics IXTN200N10L2 300
    • 1 $51.56
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    Verical () IXTN200N10L2 291 1
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    • 1 $58.56
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    Littelfuse Inc IXTN170P10P

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    Master Electronics IXTN170P10P 300
    • 1 $38.63
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    Verical IXTN170P10P 291 2
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    Onlinecomponents.com IXTN170P10P 300
    • 1 $38.63
    • 10 $38.63
    • 100 $26.68
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    Littelfuse Inc IXTN600N04T2

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    Master Electronics IXTN600N04T2 300
    • 1 $36.41
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    Verical IXTN600N04T2 291 2
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    Littelfuse Inc IXTN110N20L2

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    Master Electronics IXTN110N20L2
    • 1 $100.99
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    RS IXTN110N20L2 Bulk 8 Weeks 10
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    Littelfuse Inc IXTN500N20X4

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    Master Electronics IXTN500N20X4
    • 1 $87.05
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    • 100 $86.40
    • 1000 $30.73
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    Verical IXTN500N20X4 30 10
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    Arrow Electronics IXTN500N20X4 30 30 Weeks 10
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    RS IXTN500N20X4 Bulk 8 Weeks 10
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    IXTN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1xys

    Abstract: IXTN36N50 36N50 E72873 IXTN36N45
    Contextual Info: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500


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    ixtn36n45ixtn36n50cto150ixtn36n+4d-686191xys36n50e72873 PDF

    IXTN17N120L

    Contextual Info: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C


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    ixtn17n120lot-227e15343217n120l PDF

    21N100

    Abstract: 21N10 ixtw DIXYS IXTN21N100
    Contextual Info: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ


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    21n100o-264cto150ot-227+421n10ixtwdixysixtn21n100 PDF

    IXTN8N150L

    Contextual Info: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C


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    ixtn8n150lot-227e1534328n15l+1100ms PDF

    Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTN120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


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    ixtn120p20t300nse153432150nds+1120p20t PDF

    IXTN17N120L

    Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA IXTN17N120L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V


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    ixtn17n120le153432100ms17n120l+102-18-09-b PDF

    ixtn8n150l

    Abstract: 013009 ixtn8n
    Contextual Info: Preliminary Technical Information IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    ixtn8n150lot-227e1534328n15l+3100ms013009ixtn8n PDF

    IXtN200N10

    Abstract: IXTN200N10T 200N10T
    Contextual Info: Preliminary Technical Information IXTN200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


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    ixtn200n10tot-227e153432200n10t+29-30-08-dixtn200n10 PDF

    IXTN46N50L

    Abstract: 1614G
    Contextual Info: Preliminary Technical Information Linear Power MOSFET IXTN46N50L With Extended FBSOA VDSS ID25 D = 500 = 46 ≤ 0.16 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    ixtn46n50lot-227e15343246n50l+25-07-a1614g PDF

    Contextual Info: Preliminary Technical Information IXTN120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns G miniBLOC E153432 S S S G Symbol Test Conditions VDSS


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    ixtn120p20t300nse153432120p20t PDF

    Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTN170P10P RDS on = = ≤ -100V -170A Ω 12mΩ P-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    ixtn170p10p-100v-170aot-227+4e153432100ms170p10p3-25-09-c PDF

    Contextual Info: IXTN170P10P PolarPTM Power MOSFET VDSS ID25 RDS on D P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -170A Ω 12mΩ G S S miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    ixtn170p10p-100v-170aot-227+4e153432100ms170p10p3-25-09-c PDF

    1SN10

    Contextual Info: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs


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    ixtn15n100ot-227e1s3432c2-98+315n100c2-991sn10 PDF

    diode c248

    Abstract: IXTN36N50 C248 diode
    Contextual Info: D IX Y S IXTN36N50 MegaMOS FET V DSS = 5 0 0 V *D25 = 3 6 A ^D S o n = 0 .1 2 Q N-Channel Enhancement Mode Symbol Test Conditions v OSS ^ Maximum Ratings miniBLOC, SOT-227 B T O E153432 500 V Tj = 25°C to 150°C; RQS= 10 k£2 500 V v GS VGSM Continuous


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    ixtn36n50ot-227e153432c2-50+3c2-51diode c248c248 diode PDF

    46N50L

    Abstract: IXTN
    Contextual Info: Power MOSFETs with Extended FBSOA IXTN 46N50L N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 500 = 46 RDS on = 0.16 V A Ω Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25oC to 150oC 500 V VDGR TJ = 25oC to 150oC; RGS = 1 MΩ 500 V VGS Continuous


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    46n50l150ocot-227e153432+2sourc40ixtn PDF

    IXTN40P50P

    Contextual Info: PolarPTM Power MOSFET IXTN40P50P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 500V - 40A Ω 230mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    ixtn40p50pot-227e153432100ms+240p50p3-06-08-a PDF

    ixys ixtn 79n20

    Abstract: 79N20 IXTN79N20 ixtn 79n20
    Contextual Info: MegaMOSTMFET IXTN 79N20 VDSS = 200 V = 85 A Ω = 25 mΩ ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient


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    79n20ot-227ixys ixtn 79n20ixtn79n20+1ixtn 79n20 PDF

    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


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    ixtn32p60pot-227e1534322500ias+2100ms32p60p PDF

    IXTN200N10L2

    Abstract: 200N10L2 200N1 100A MOSFET ixys IXTN200
    Contextual Info: Advance Technical Information IXTN200N10L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 100V = 178A ≤ 11mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


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    ixtn200n10l2ot-227e153432100ms+4200n10l2200n1100a mosfet ixysixtn200 PDF

    Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN17N120L D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ RDS on G S S miniBLOC E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V


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    ixtn17n120le153432100ms17n120l+102-18-09-b PDF

    Contextual Info: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTN210P10T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


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    ixtn210p10t-100v200nse153432+2-100a210p10t PDF

    ixys ixtn 36n50

    Abstract: 36N50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50
    Contextual Info: IXYS_ MegaMOS FET IXTN 36N50 VDSS = 500 V U = 36A DS on — 12 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =2 5°C to 150°C 500 V V 0GR T j = 2 5 °C to 150°C; RGS= 10ki2 500 V Vos Continuous 120 V v GSM


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    36n5010ki2ot-227e153432+7c2-46ixys ixtn 36n50ixtn 36n50 cixys 36n50ac motor forward reverse controlixtn36n50ixtn 36n50 PDF

    IXTN600N04T2

    Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN600N04T2 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


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    ixtn600n04t2ot-227e153432600n04t2 PDF

    IXTN30N100L

    Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    ixtn30n100le15343230n100l5-07-a PDF