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    IXTN200 Search Results

    IXTN200 Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTN200N10L2
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 178A SOT-227 Original PDF 165.52KB
    IXTN200N10T
    IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 200A SOT-227 Original PDF 5
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    IXTN200 Price and Stock

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    Littelfuse Inc IXTN200N10L2

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    Master Electronics IXTN200N10L2 300
    • 1 $51.56
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    • 100 $41.29
    • 1000 $40.97
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    Verical () IXTN200N10L2 291 1
    • 1 $64.69
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    IXTN200N10L2 20 20
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    Newark IXTN200N10L2 Bulk 278 1
    • 1 $58.56
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    RS IXTN200N10L2 Bulk 8 Weeks 10
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    Onlinecomponents.com IXTN200N10L2 300
    • 1 $51.56
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    • 100 $41.29
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    Littelfuse Inc IXTN200N10T

    Discmsft Nchtrenchgategen1 Sot-227B(Mini; |Littelfuse IXTN200N10T
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    RS IXTN200N10T Bulk 8 Weeks 10
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    Onlinecomponents.com IXTN200N10T
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    IXYS Corporation IXTN200N10T

    MOSFET Modules 100V 200A
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    TTI IXTN200N10T Tube 300
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    Bristol Electronics IXTN200N10T 200 1
    • 1 $24.66
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    Quest Components () IXTN200N10T 160
    • 1 $49.32
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    IXTN200N10T 160
    • 1 $26.71
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    TME IXTN200N10T 1
    • 1 $40.61
    • 10 $32.20
    • 100 $32.20
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    IXYS Corporation IXTN200N10L2

    MOSFET Modules Linear L2 Pwr MOSFET w/Extended FBSOA
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    TTI IXTN200N10L2 Tube 300
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    TME IXTN200N10L2 1
    • 1 $54.80
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    • 100 $40.13
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    IXTN200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXtN200N10

    Abstract: IXTN200N10T 200N10T
    Contextual Info: Preliminary Technical Information IXTN200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original
    ixtn200n10tot-227e153432200n10t+29-30-08-dixtn200n10 PDF

    IXTN200N10L2

    Abstract: 200N10L2 200N1 100A MOSFET ixys IXTN200
    Contextual Info: Advance Technical Information IXTN200N10L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 100V = 178A ≤ 11mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original
    ixtn200n10l2ot-227e153432100ms+4200n10l2200n1100a mosfet ixysixtn200 PDF

    Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTN200N10T RDS on N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original
    ixtn200n10tot-227e153432200n10t+19-30-08-d PDF

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original
    5v-100vo-247plus220isoplus220tm+14plus220smdo-252o-220o-2631262-33ixtp44n10tixth200n10tixtp76n075ixta60n10tixtq130n10tixtp98n075tixtp130n10tixtp240n055tixtp64n055t PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF