IXTP130N10T Search Results

IXTP130N10T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP130N10T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-220	Original	PDF		5

IXTP130N10T Price and Stock

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IXYS Corporation IXTP130N10T MOSFET N-CH 100V 130A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP130N10T	Tube	174		1	1 $4.76 10 $4.76 100 $2.24 1000 $2.03 10000 $2.03	Buy Now
Mouser Electronics	IXTP130N10T					1 $4.76 10 $2.47 100 $2.24 1000 $2.02 10000 $2.02	Get Quote
Future Electronics	IXTP130N10T	Tube			300	1 - 10 - 100 $1.77 1000 $1.72 10000 $1.68	Buy Now
TTI	IXTP130N10T	Tube	300		50	1 - 10 - 100 $2.24 1000 $1.72 10000 $1.72	Buy Now
TME	IXTP130N10T				1	1 $3.56 10 $2.83 100 $2.55 1000 $2.55 10000 $2.55	Get Quote

Chip 1 Exchange	IXTP130N10T		3,443			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IXTP130N10T		2,149		1	1 - 10 - 100 $5.44 1000 $5.44 10000 $5.02	Buy Now
Littelfuse Inc IXTP130N10T Discmsft Nchtrenchgate-Gen1 To-220Ab/Fp/ Tube \|Littelfuse IXTP130N10T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTP130N10T	Bulk			300	1 - 10 - 100 $2.44 1000 $1.96 10000 $1.83	Buy Now

IXTP130N10T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ	Original	IXTA130N10T IXTP130N10T O-263 130N10T 9-08-A	PDF
Contextual Info: Preliminary Technical Information IXTA130N10T IXTP130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 130 A Ω ≤ 8.5 mΩ TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C	Original	IXTA130N10T IXTP130N10T O-263 O-220) O-220 O-263 130N10T	PDF
IXTP130N10T Abstract: IXTA130N10T IXTP130N10 130n10 S5080 Contextual Info: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ	Original	IXTA130N10T IXTP130N10T O-263 130N10T 9-08-A IXTP130N10T IXTA130N10T IXTP130N10 130n10 S5080	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T	PDF
130N10T Abstract: 130n10 IXTP130N10 Contextual Info: Preliminary Technical Information IXTH130N10T IXTQ130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 130 A Ω ≤ 8.5 mΩ TO-247 (IXTH) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTH130N10T IXTQ130N10T O-247 130N10T 130N10T 130n10 IXTP130N10	PDF