1xys
Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Contextual Info: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500
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ixtn36n45ixtn36n50cto150ixtn36n+4d-686191xys36n50e72873
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diode c248
Abstract: IXTN36N50 C248 diode
Contextual Info: D IX Y S IXTN36N50 MegaMOS FET V DSS = 5 0 0 V *D25 = 3 6 A ^D S o n = 0 .1 2 Q N-Channel Enhancement Mode Symbol Test Conditions v OSS ^ Maximum Ratings miniBLOC, SOT-227 B T O E153432 500 V Tj = 25°C to 150°C; RQS= 10 k£2 500 V v GS VGSM Continuous
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ixtn36n50ot-227e153432c2-50+3c2-51diode c248c248 diode
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36N50
Abstract: IXTN 36N50 C N36N50 ixys ixtn 36n50 IXTN36N50
Contextual Info: MegaMOS FRED IXTN36N50 V DSS = 500 V lD26 = 36 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS Tj = 25°C to 150°C V Tj = 25°C to 150°C; RGS = 10 500 V 500 V Continuous +20 V T ransient ±30 V ^□25 Tc = 25°C
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ixtn36n50ot-22736n50ixtn 36n50 c+2n36n50ixys ixtn 36n50
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36N50
Abstract: IXYS 36N50 IXTN 36N50 C ixys ixtn 36n50 193H IXTN36N50
Contextual Info: MegaMOS FRED IXTN36N50 VDSS = 500 V •□25 = 3 6 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions v ¥ d ss Tj = 25°C to 150°C 500 V V och Tj = 25°C to 150°C; RGS = 10 k£2 500 V V GS Continuous +20 V v T ransient ±30 V 36
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ixtn36n50ot-22736n50ixys 36n50+3ixtn 36n50 cixys ixtn 36n50193h
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir
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SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
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buz10buz11buz11abuz71+16buz71abuz72abuz80airf520irf530irf540ssh6n80rfp60n06irf3205 irbuk417-500aesfp70n03buz91a2sk2717stmicroelectronicsbuz22ixfh13n50
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IXTN36N50
Contextual Info: • 4 b û b 2 2 b O G O l ûl l TTfl ■ IX Y DIXYS Pow er M O S FE T IX T N 3 6 N 4 5 IX T N 3 6 N 5 0 N-Channel Enhancement Mode D cont v¥ p dss DS(on) = 36 A = 450/500 V = 0 .1 2 & R = 0.5 Q Symbol Test Conditions Voss Tj = 25°C to 150°C Maximum Ratings
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ixtn36n45ixtn36n50d-68619 |
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fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06ssh6n80spb32n03lsmp60n03-10lssp80n06airf540 applicationrfp60n06fsd9933a2sk790irfz30
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