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    IXTN600N04T2 Search Results

    IXTN600N04T2 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTN600N04T2
    		IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 40V 600A SOT-227 Original PDF 6
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    IXTN600N04T2 Price and Stock

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    IXYS Corporation IXTN600N04T2

    MOSFET N-CH 40V 600A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTN600N04T2 Tube 186 1
    • 1 $35.49
    • 10 $26.30
    • 100 $23.32
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    Mouser Electronics IXTN600N04T2 956
    • 1 $35.48
    • 10 $26.28
    • 100 $25.75
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    Future Electronics IXTN600N04T2 Tube 300
    • 1 -
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    • 100 $27.11
    • 1000 $26.66
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    TTI IXTN600N04T2 Tube 300
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    TME IXTN600N04T2 1
    • 1 $34.21
    • 10 $28.40
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    ComSIT USA IXTN600N04T2 967
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    IBS Electronics IXTN600N04T2 300
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    Littelfuse Inc IXTN600N04T2

    Mosfet, N-Ch, 40V, 600A, Sot-227; Channel Type:N Channel; Continuous Drain Current Id:600A; Drain Source Voltage Vds:40V; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; Power Dissipation:940W; No. Of Pins:4Pins Rohs Compliant: Yes |Littelfuse IXTN600N04T2
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    Newark IXTN600N04T2 Bulk 300
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    RS IXTN600N04T2 Bulk 38 Weeks 10
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    • 10 $37.31
    • 100 $33.58
    • 1000 $33.58
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    IXTN600N04T2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTN600N04T2

    Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN600N04T2 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original     		IXTN600N04T2 OT-227 E153432 600N04T2 IXTN600N04T2 PDF

    IXTN600N04T2

    Contextual Info: Advance Technical Information IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXTN600N04T2 OT-227 E153432 600N04T2 IXTN600N04T2 PDF

    IXTN 600N04T2

    Abstract: IXTN600N04T2 123B16
    Contextual Info: Preliminary Technical Information IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original     		IXTN600N04T2 OT-227 E153432 600N04T2 IXTN 600N04T2 IXTN600N04T2 123B16 PDF

    IXTN 600N04T2

    Abstract: IXTN600N04T2 600N04T2
    Contextual Info: IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.3mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR


    Original     		IXTN600N04T2 OT-227 E153432 So00A 600N04T2 IXTN 600N04T2 IXTN600N04T2 600N04T2 PDF

    Full-Bridge topology switching power supply

    Abstract: hybrid car charger inverter sot-227 footprint dc link capacitor EV Battery IXFN520N075T2 ups circuit power mosfet for ev battery charger dc to dc full-bridge mosfet for dc to ac inverter
    Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F GigaMOSTM TrenchT2TM Power MOSFETs Power MOSFET Solutions for low voltage, high current power conversion systems january 2010 OVERVIEW IXYS announces the portfolio expansion of its GigaMOSTM product family with new


    Original     		PDF