IXTN210P10T Search Results
IXTN210P10T Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXTN210P10T |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 210A SOT-227 | Original | 181.05KB |
IXTN210P10T Price and Stock
Littelfuse Inc IXTN210P10TMOSFET P-CH 100V 210A SOT227B |
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IXTN210P10T | Tube | 374 | 1 |
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IXYS Corporation IXTN210P10TMOSFET Modules TrenchP Channel Power MOSFETs |
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IXTN210P10T | 91 |
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IXTN210P10T | Tube | 300 |
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IXTN210P10T | 1 |
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IXYS Corporation IXTN210P10T (TRENCHP SERIES)Mosfet Module, P-Channel, 100V, 210A; Channel Type:P Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:100V; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:830W Rohs Compliant: Yes |Ixys Semiconductor IXTN210P10T |
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IXTN210P10T (TRENCHP SERIES) | Bulk | 202 | 1 |
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IXTN210P10T Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTN210P10T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings |
Original |
IXTN210P10T -100V 200ns E153432 -100A 210P10T | |
sot 227b
Abstract: ixtn210p
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Original |
IXTN210P10T -100V 200ns E153432 -100A 210P10T sot 227b ixtn210p | |
Contextual Info: Preliminary Technical Information IXTN210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier trr = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns G S miniBLOC E153432 S S G Symbol Test Conditions Maximum Ratings |
Original |
IXTN210P10T -100V 200ns E153432 -100A 210P10T |