PN 2907A Search Results

2N2901

Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Contextual Info: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

2N2907

Abstract: 2N2907A PN2907 PN2907A pn2222 2n2222 2N2222 2N2222A PN2222 PN2222A pn2907 2n2907
Contextual Info: 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE T0-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.

st2222a

Abstract: RXT2222A st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR sst2222a pn 2222a
Contextual Info: Transistors I NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A •Features •External dimensions (Units : mm) 1 } B V ceo< 4 0 V ( ¡c ~ 1 0 rn A ) 2 ) Com plem ents the U M T 2907A /S ST2907A /M M ST2907A /RXT2907A/PN 2907A.

2905a

Abstract: ic 2905a 2904a 2907A 2907 a12907 2N2907A 2808a 2904 2906A
Contextual Info: 2N 2904A 2N 2905A 2N 2906A SILICON PLANAR PNP a' 2” 7* GENERAL PURPOSE AM PLIFIERS AND SWITCHES The 2N 2904A, 2N 2905A, 2N 2906A and 2N 2907A are silicon planar epitaxial PN P tran­ sistors in Jedec T O - 39 for 2N 2904A and 2N 2905A and in Jedec T O -18 (for 2N 2906A

ses 554

Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
Contextual Info: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12

T056

Abstract: 2904 2904a 2905 2906 transistor t05 PN2904 T018 BFX29 N2905
Contextual Info: PNP Silicon Transistors PN P S ilic o n Planar Transistors fo r m ed ium level sw itching Type PTOT 2 P h/rfdO V /IO m A hF f V 5 5 4 4 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 — > 50 — 3 3 > 40 > 40 50 . 200 (10/50) 50 . 200 (0.4/10) >40 (10/150) > 40 (10/150)

LB121A

Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
Contextual Info: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C

Contextual Info: PN2222 PN2222A _y SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 package prim arily intended for linear and switching applications. P-N-P complement is PN2907/2907A. Q UICK REFERENCE D A T A

bc109 equivalent

Abstract: BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. D evice Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

BEL 100N TRANSISTOR

Abstract: bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187
Contextual Info: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts min hFE at bias mm /max. Ic mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 —

CV7756

Abstract: bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Absolute Maximum Rating h F E at Collector Current CV Number Commercial Case Equivalent Outline Polarity V C B VCE V V V e b hFE hFE Ic Min. fT MHz Converted to B S 9 3 0 0 Small Signal Planar CV continued

marking code nt amplifier

Abstract: MARKING 2907A 2907A BF
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

NPN 2907A EBC

Abstract: 2907A EBC 2222a pn
Contextual Info: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

2N2907A FAIRCHILD SEMICONDUCTOR

Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

2n 2222A 3904

Contextual Info: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470

2N2222A zetex

Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715
Contextual Info: 1 9 -4 5 0 7 ; R e v . 1; 3 /9 2 B a ttery-P ow ered Supply S y s te m s The M AX716 com bines circuitry for four low-dropout linear regulators, three D C -D C sw itching regulators, and powersu pervisory functions on a single IC. All but one regulator output is logic controlled so that loads m ay be shut down

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

PN 2907a

Abstract: 2907A BF PN2907A
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

Contextual Info: KSP2907A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: Vceo =60V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic Symbol Rating Unit VcBO V qeo V ebo tc Pc Tj