BC327P Search Results

BC327PS

Contextual Info: BC327PS Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC327PM Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC327PK Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC327PL Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC327P Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

BC338C

Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

bc177

Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE

BFS98

Abstract: ZTX502 BFS60 ZTX212 BFS97 ZTX108 ZTX304 ZTX337 bfs59 BC107P
Contextual Info: TABLE 1: NPN GENERAL PURPOSE The d e vice s s h o w n in this table are general p urpose tra n sisto rs d esigned for sm all signal am plification from d.c. to radio frequencies. Typical application areas include: A U D IO F R E Q U E N C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2TX650

Abstract: BFS97 BFS98 ZTX337 ZTX338 ZTX452 MPSA06 MPSA56 ZTX451 ZTX454
Contextual Info: 5bE D m In ? Q S ? ñ 00DbT3T S03 • Z E T B TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1000mW at 25 °C ambient temperature.

BC557P

Abstract: 945 MOTHERBOARD CIRCUIT diagram BFS60 mpsa05 ZTX107 ztx304 ZTX337 ZTX338 BC546P BC556P
Contextual Info: PNP GENERAL PURPOSE T A B LE 2 - PN P SILIC O N P LA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

BF493

Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.

Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 °C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BC557P

Abstract: ZTX212 ZTX452 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B LE 1 - NPN SILIC O N PLA N A R G E N E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

BFS98

Abstract: ZTX452 ZTX750 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX453
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE

ZTX453

Abstract: BFS98 BC338C ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AM PLIFIERS, DRIVERS and OUTPUT STA G ES, OSCILLATORS, AND GENERAL PURPOSE

pnp SK100

Abstract: BEL100P 5n50u 2SA561 BCY54 2SA1090 2sa532 2N1035 BC526 OC203
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 See Index Semelab Motorola See Index Indust Mexi ToshibaCorp See Index FerrantiLtd Semi Inc Elec Trans ~~~:~ ~emllnc 2SA889 BC857CR BC857CR BC857CR BC860CR BC860CR BC860CR BC557P V BR CEO 30 35 40 45

BC337B

Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.

2N3904

Abstract: BC557P BFS98 ZTX452 BFS60 ZTX304 BFS59 MPS6566 ZTX3904 ZTX453
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - NPN SILICON PLANAR GENERAL PURPOSE: TRANSISTORS The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX338

Abstract: ZTX452 MPSA05 MPSA06 MPSA55 MPSA56 ZTX337 ZTX450 ZTX451 ZTX453
Contextual Info: MEDIUM POWER T A B LE 7 - N PN /PN P SILICO N PLA N A R M EDIUM POW ER T R A N S IS T O R S The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities in excess of 500 mW at