C 337-25
Abstract: TBC337 C 33725 338-25 tBC327
Contextual Info: SILICON NPN EPITAXIAL TYPE BC337/338 PRIMARLIY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS, PNP COMPLEMENTS ARE TBC327 AND TBC328. . High VcEO : 45V TBG337 25V (TBC338) . Low Saturation Voltage : VCE(sat)=0.7V(Max.) at lc=500mA MAXIMUM RATINGS (Ta=25°C)
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bc337/338tbc327tbc328tbg337+6tbc338500matbc337c 337-25c 33725338-25
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr
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TBC337
Abstract: TBC327 pin configuration Bc337 BC327 BC337 BC327 BC337 TBC327-25 TBC337-25 pin configuration Bc327 ibm 358
Contextual Info: BC327, BC337 Series Bipolar Transistors General Description: Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier. Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19
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bc327bc337tbc337tbc327+6pin configuration bc337bc327 bc337tbc327-25tbc337-25pin configuration bc327ibm 358
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TBC560
Contextual Info: > OVERSEA STANDARD < Typo No. Application NPN PNP . hFE v CE0 V >C PC (mA) (mW) VcE(sal)MAX. VCE (V) •c >c (mA) (mA) f-|-TYP (MIN.) ■b (mA) (MHZ) NF MAX. Vc e 'c (V) (mA) Pin Vc e ■c f Rg (dB) (V) (mA) (Hz) (K n ) —3 O to I ! I,CD Configuration ¡.<0
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tbc337tbc327tbc338tbc328+7tbc546s1838s1839s1840bf422bf423tbc560
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180M 290
Abstract: BC157B BCY79CP 6p6p BCY79BP LOW-POWER SILICON PNP BCB07-40 bcb07 BC327BP MMBA811CB
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC307B5 JE9015C JE9015C TMPT813S4 BCY79 BCY79P BCY79VII BCW70 BCF70 BCF70 ~g~jgR 15 20 BCF70R BCB57B BC177P BC177PK BC307P BC307PK BC307PL BC560B ~~~7AR 25 30 1T130A KSA539 KSA707 2SA564A BCB60AR BCB60AR BCB60AR
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bc307b5je9015ctmpt813s4bcy79+14bcy79pbcy79viibcw70bcf70180m 290bc157bbcy79cp6p6pbcy79bplow-power silicon pnpbcb07-40bcb07bc327bpmmba811cb
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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pnp SK100
Abstract: BEL100P 5n50u 2SA561 BCY54 2SA1090 2sa532 2N1035 BC526 OC203
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 See Index Semelab Motorola See Index Indust Mexi ToshibaCorp See Index FerrantiLtd Semi Inc Elec Trans ~~~:~ ~emllnc 2SA889 BC857CR BC857CR BC857CR BC860CR BC860CR BC860CR BC557P V BR CEO 30 35 40 45
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2n2605abc307cbc560ctbc327+13bc327-40bc327p2sa666apnp sk100bel100p5n50u2sa561bcy542sa10902sa5322n1035bc526oc203
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TBC547
Abstract: TBC548 TBC560 TBC557 S1420 S1423 TEC9015 TED1502 tbc328 TBC546
Contextual Info: This > OVERSEA STANDARD Material Type No. Application NPN < . hFE v CE0 >C PC PNP V (mA) (mW) fT TYP (MIN.) VQE(sal) M A X. VCE •c 'C (V) (mA) (mA) •b VCE (mA) (MHZ) (V) NF MAX. <C (mA) (dB) VCE 'C (V) (mA) f Pin Rg (Hz) (Kn) I,CD Copyrighted 1° Configuration
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1a1001ted1602ted1802tec8012+15tec9012tec9015si806s1808s1837tbc337tbc547tbc548tbc560tbc557s1420s1423ted1502tbc328tbc546
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tb31224cf
Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
Contextual Info: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future
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sce0007atb31224cftransistor 2sk1603ta8264ahq+7tc94a58fagta7769pta8275hq2sk1603ta8266hq2sk2056s2y52
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