S1423 Search Results

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. LPF-S142331S 14.57 [0.574] R0.50 [R0.02Q] 2.01 [0.079] 5 '07 ^0.200] J 3.05 [Q.12Q] D ETAIL C in OJ DETAIL A A r V GRDVE FDR P IP E BREAK AWAY a PLS, 3.18 [0.125] SQR. <2 PLS.) 25.99 [1.023] 10 RIBS DN THIS POST ONLY

photoelectrics amplifier

Abstract: s411 S1423 LIGHT ACTIVATED SWITCH CIRCUIT DIAGRAM 6 volt relay pin out diagram s 1423 156 724 MARKING BB1 S111 S111A S142
Contextual Info: Photoelectrics Amplifier Type S1423 • Amplifier relay for photoelectric switches • Multiplex system, master/slave 20 ms cycle • Sensitivity range DIP-switch selectable • Sensitivity adjustment by potmeter • Dirt accumulation and alignment control

T112-16

Abstract: Halbleiterbauelemente DDR Datenblattsammlung Tesla katalog tesla schaltkreise mikroelektronik datenblattsammlung VEB mikroelektronik mikroelektronik RFT mikroelektronik DDR rft katalog
Contextual Info: Di vorliegenden Datenblätter dienen nur sur- Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente ©ingestuften Sortimente© Aus den Datenblättern können keine Liefer- oder ProduktVer­ bindlichkeiten abgeleitet werden*

PTI 30 040 pa

Abstract: t04 68 3 pin diode sg ag20 LP1 K06 1LPN3 AC03 nec ae02 marking HT15 22 marking ag01 TWN AA 427
Contextual Info: User’s Manual µPD98412 NEASCOT-X15 Advanced ATM Switch LSI Document No. S14169EJ2V0UMJ1 (2nd edition) Date Published October 2000 N CP(K) Printed in Japan 1999 [MEMO] 2 User’s Manual S14169EJ2V0UM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: SPICE Device Model Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the

Contextual Info: DG9421, DG9422 www.vishay.com Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. • 2.7 V thru 12 V single supply or ± 2.7 V

Contextual Info: DG508B, DG509B www.vishay.com Vishay Siliconix Precision 8-Channel / Dual 4-Channel CMOS Analog Multiplexers DESCRIPTION FEATURES The DG508B is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address

Contextual Info: DG2720 www.vishay.com Vishay Siliconix 2 Port, USB 2.0 High Speed 480 Mbps Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2720 is 2 Port high speed analog switch optimized for USB 2.0 signal switching. The DG2720 switch is configured in DPDT. It handles bidirectional signal flow,

Contextual Info: SPICE Device Model SQ4184EY www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast switching Qgs (nC) 3.3 • Ease of paralleling 11 • Simple drive requirements

Contextual Info: IRFD320, SiHFD320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive avalanche rated 1.8 20 Qgs (nC) 3.3 • End stackable Qgd (nC) 11 • Fast switching Configuration

TBC560

Contextual Info: > OVERSEA STANDARD < Typo No. Application NPN PNP . hFE v CE0 V >C PC (mA) (mW) VcE(sal)MAX. VCE (V) •c >c (mA) (mA) f-|-TYP (MIN.) ■b (mA) (MHZ) NF MAX. Vc e 'c (V) (mA) Pin Vc e ■c f Rg (dB) (V) (mA) (Hz) (K n ) —3 O to I ! I,CD Configuration ¡.<0

MURATA GJM

Abstract: Agilent RF amplifier QFN MURATA GRM
Contextual Info: DATA SHEET SKY65040-360LF: 1.7-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA • Ultra low-noise applications Features Figure 1. SKY65040-360LF Block Diagram • Ultra-low Noise Figure = 0.65 dB @ 1.95 GHz

HTA06

Abstract: hta08 CBA07 HTD12 HTA12 ic 351 HTA09 CBD16 12-PHY HTA01
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

g30 nec 222

Abstract: AK03 CBD46 HTA09 AG09 CBD21
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD98412 1.5G ATM SWITCH LSI DESCRIPTION The µPD98412 NEASCOT-X15 is an LSI integrating ATM switch functions on a single chip. It has UTOPIA Level2 interfaces and can switch 30 x 30 circuits by connecting multiple PHY devices. This LSI employs a shared

2SA1005K

Abstract: BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 ~~':5U3~ 25 30 35 40 MPS6533M MMCM2907 MPS6534

IMS1420M

Abstract: 1AV Series
Contextual Info: S1423M CMOS High Performance 4K x 4 Static RAM MIL-STD-883C FEATURES DESCRIPTION • INM O S1Very High Speed CM OS • Advanced Process - 1.6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to + 125° C • 4K x 4 Bit Organization

Contextual Info: B U R R -BR O W N IS0518 Bidirectional ISOLATED DIGITAL COUPLERS FEATURES DESCRIPTION • LOW POWER CONSUMPTION: < 12mW per Channel The IS0518 is an 8-channel, isolated, bidirectional digital coupler based on the Burr-Brown capacitive barrier technology. • 1500Vrms ISOLATION:

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

ag-07

Abstract: hta08 HTA06 HTD12 HTD13 nec ac03 l05 cg ag02 AK07 AG07
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD98412 ADVANCED ATM SWITCH LSI DESCRIPTION The µPD98412 NEASCOT-X15 is an LSI integrating ATM switch functions on a single chip. It has UTOPIA Level2 interfaces and can switch 30 x 30 circuits by connecting multiple PHY devices. This LSI employs a shared

PS-3PF-S4T1-PKL1

Abstract: CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IMS1423

Abstract: IMS1420M IMS1423S-35M CZ 553
Contextual Info: S1423M CMOS High Performance 4K x 4 Static RAM MIL-STD-883C |Y |Q g * DESCRIPTION FEA TU R E S The IN M O S IM S 1423M is a high speed 4K x 4 C M O S static R AM processed in full com pliance to M ILSTD -883C . The IM S 1423M provides m axim um d ensity

Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D DPAK (TO-252)

LP1 K06

Abstract: AC03 nec marking ag01 TWN AA 427 epd driver ic epd source driver ic IC Marking M03 6 PIN
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid