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    SI3127DV Search Results

    SI3127DV Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI3127DV-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 60V TSOP6S Original PDF 251.49KB
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    SI3127DV Price and Stock

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    Vishay Intertechnologies SI3127DV-T1-GE3

    Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A
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    TME SI3127DV-T1-GE3 1
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    Avnet Americas SI3127DV-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics SI3127DV-T1-GE3
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    Newark () SI3127DV-T1-GE3 Cut Tape 6,000
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    SI3127DV-T1-GE3 Tape & Reel 6,000
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    SI3127DV-T1-GE3 Cut Tape 1
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    SI3127DV-T1-GE3 Tape & Reel 100
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    SI3127DV-T1-GE3 Tape & Reel 6,000
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    TTI SI3127DV-T1-GE3 Reel 6,000
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    EBV Elektronik SI3127DV-T1-GE3 53 Weeks 3,000
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    Vishay Huntington SI3127DV-T1-GE3

    MOSFET P-CHAN 60V TSOP6S
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    Win Source Electronics SI3127DV-T1-GE3 26,000
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    SI3127DV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the


    Original     		si3127dv2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -60 RDS(on) (Ω) MAX. ID (A) d 0.089 at VGS = -10 V -5.1 0.146 at VGS = -4.5 V -4 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 10.1 nC


    Original     		si3127dvsi3127dv-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF