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    SI3127DV Search Results

    SI3127DV Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI3127DV-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 60V TSOP6S Original PDF 251.49KB
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    SI3127DV Price and Stock

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    Vishay Siliconix SI3127DV-T1-GE3

    MOSFET P-CH 60V 3.5A/13A 6TSOP
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    DigiKey () SI3127DV-T1-GE3 Cut Tape 30,636 1
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    SI3127DV-T1-GE3 Digi-Reel 30,636 1
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    SI3127DV-T1-GE3 Reel 30,000 3,000
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    Vishay Intertechnologies SI3127DV-T1-GE3

    Power MOSFET, P Channel, 60 V, 5.1 A, 0.074 ohm, TSOP, Surface Mount - Tape and Reel (Alt: SI3127DV-T1-GE3)
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    Avnet Americas () SI3127DV-T1-GE3 Reel 6,000 75 Weeks 3,000
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    SI3127DV-T1-GE3 Ammo Pack 1
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    SI3127DV-T1-GE3 Ammo Pack 1
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    Mouser Electronics SI3127DV-T1-GE3 286,724
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    Newark () SI3127DV-T1-GE3 Cut Tape 37,439 1
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    SI3127DV-T1-GE3 Cut Tape 1,721 1
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    SI3127DV-T1-GE3 Reel 1
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    TTI SI3127DV-T1-GE3 Reel 3,000 3,000
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    TME SI3127DV-T1-GE3 1
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    Chip 1 Exchange SI3127DV-T1-GE3 354,900
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    Chip Stock SI3127DV-T1-GE3 18,500
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    EBV Elektronik SI3127DV-T1-GE3 56 Weeks 3,000
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    IBS Electronics SI3127DV-T1-GE3 105,000 3,000
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    Wuhan P&S SI3127DV-T1-GE3 249,000 1
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    Vishay Huntington SI3127DV-T1-GE3

    MOSFET P-CHAN 60V TSOP6S
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    Win Source Electronics SI3127DV-T1-GE3 15,000
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    SI3127DV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the


    Original     		Si3127DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -60 RDS(on) (Ω) MAX. ID (A) d 0.089 at VGS = -10 V -5.1 0.146 at VGS = -4.5 V -4 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 10.1 nC


    Original     		Si3127DV Si3127DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF