SI3127DV Search Results
SI3127DV Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3127DV-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 60V TSOP6S | Original | 251.49KB |
SI3127DV Price and Stock
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Vishay Intertechnologies SI3127DV-T1-GE3MOSFET P-CH 60V 3.5A/13A 6TSOP |
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SI3127DV-T1-GE3 | Digi-Reel | 42,026 | 1 |
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SI3127DV-T1-GE3 | Reel | 42,000 | 75 Weeks | 3,000 |
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SI3127DV-T1-GE3 | 286,644 |
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SI3127DV-T1-GE3 | Cut Tape | 43,309 | 1 |
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SI3127DV-T1-GE3 | Reel | 9,000 | 3,000 |
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SI3127DV-T1-GE3 | 1 |
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SI3127DV-T1-GE3 | 354,900 |
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SI3127DV-T1-GE3 | 18,500 |
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SI3127DV-T1-GE3 | 56 Weeks | 3,000 |
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SI3127DV-T1-GE3 | 189,000 | 1 |
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Vishay Huntington SI3127DV-T1-GE3MOSFET P-CHAN 60V TSOP6S |
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SI3127DV-T1-GE3 | 15,000 |
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SI3127DV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the |
Original |
Si3127DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -60 RDS(on) (Ω) MAX. ID (A) d 0.089 at VGS = -10 V -5.1 0.146 at VGS = -4.5 V -4 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 10.1 nC |
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Si3127DV Si3127DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |