2SA70 Search Results

Contextual Info: 2SA706-2 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)7.9 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC 8050

Abstract: 2SC 8550 2sd 8050 8050 8550 2sd327 2SC185 2SCI175 2sa723 2SA598
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE VcEO Pd Ic mW (A) VCER* (V) H FE ^CE(sat) min max Ic VfE max Ic (mA) (V) (V) (A) fi­ C0h r n in max (MHz) (MHz) COMPLE­ MENTARY TYPE 2SA659 2SA683 2SA708 2SA719 P P P P TO-92B

2SC1013

Abstract: 2SC1243 2SA623 2SA703 2sc124
Contextual Info: PNP x t i ^ + v r 2SA623, 2SA703 bÿ>iîZ9 51- ffí 131 • •* ~ / u K i M V - * -e , V CEä - 2V—2SA623, V0Eg - l V —2SA703 o .k n e e • I- 7 ^ * |g £ c 4 W ( 1 0 0 x l 0 0 x 2 m m 7 ^ i S fe iS S o # , j f H ^ 2 5 l C ) 0 3 . 2SC1013, 2SC1243

2SA708

Contextual Info: fr | e FORWARD INTERNATIONAL ELECTRONICS l id . 2SA708 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AM PLIFIER MEDIUM SPEED SW ITCHING * Complement to2Scl008 * Collector-Base Voltage Vcbo=-80 V * Collector Dissipation; Pc=800mW

2SA708

Abstract: 2SA708A 2sa708 transistor 708AI 708a
Contextual Info: 2SA708, 2SA708A 2SA708, 2SA708A PNP U3V h 7 V i/^ ^ /P N P y ^ v y ffl/L o w SILICON EP ITA XIA L TRANSISTOR Frequency Am plifier, Medium Speed Switching i l f i f H l f f l / 'I n d u s t r i a l Use 2SA708, 708A i , ftx H ffl h 7 ' / y x ; t , •< # a x *ttS •

2sa726

Abstract: 2SA798 2Sa750 2SA706 2sa735 2SA798 equivalent 2SA725 2SC1432 2SA773 2SA762
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA701 -30 -5 -50 200 125 200 -6 -1 80* 12 2SA702 -50 -5 -50 200 125

2SA708

Abstract: VCBO-80V
Contextual Info: Transistors 2SA708 USHA INDIA LTD LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • Collector-Base Voltage Vcbo=-80V • Collector Dissipation Pc = 800mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Symbol Unit Collector-Base Voltage Collector-Emitter Voltage

702 y TRANSISTOR

Abstract: 2SC693 2SA702 702 TRANSISTOR 2SA701 702 Z TRANSISTOR 702I
Contextual Info: 2SA701, 702 Epitaxial Planar T y p e Silicon T ran sisto r n «r&tËjï&^wisr *>*. 2SA70I 2SA702 VCB0 — 30 — 50 V VCEO — 30 — 50 V insolute Maximum Ratings/Ta=25°C zj u f ? • • i 5 -y * 1;J3I m fit —5 V t:;5!ì *0 — 50 mA =i Ls ' ? 5 tB Ä

2sa709

Contextual Info: Transistors 2SA709 USHA INDIA LTD HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage Vcbo=-160V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage VcBO -1 6 0 -1 5 0

Contextual Info: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1008 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR L O W F R E Q U E N C Y A M P L IF IE R M E D IU M S P E E D S W IT C H IN G * * * * Package: TO-92 Complement to 2SA708 High Collector-Base Voltage VCBO=80V

2SA10150

Abstract: 2SA708Y 2SA1266GR 2SA1015Y 2SA1267GR 2SA1267 2SA562Y 2SA1015 2SA1266-0 2SA5620
Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. 2SA1015 ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 50 50 5 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Pd (W) 'c (A) @Tc=25"c 0.4 0.15 CBQ ^CB ' ces ^CE (mA) Max @ (V) (MA) Max

bc 558 equivalent

Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD304

Abstract: 2SD337 2SD309 2SD350 2SD341 2sd370 2SD311 2SD333 2sd316 2SD347
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD301 80 6 10A 50W(Tc=25ºC) 175 2500 4 5A 2SD302 2SD303 2SD304

2SA705

Abstract: 2SA678 2SA847 2SA704 2SA817A transistor 2SA1007A 2SA1069A 2SA677 2SC631A 2SA678 C
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2SA1020Y

Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH

2SA708 NEC

Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc