2906A Search Results

LA7116

Abstract: LC7412
Contextual Info: Ordering number:EN 2 9 0 6 A Monolithic Linear 1C NO.2906A LA7116 SAMYO i VCR Servo Interface The LA7116 is a VCR servo interface IC th a t can be used in conjunction w ith the LC7412, 7413 to form a servo system w ith a good cost perform ance. Functions • D rum FG amp

Contextual Info: irdering number: EN 2 9 0 6 A Monolithic Linear 1C NO.2906A LA7116 VCR Servo Interface The LA7116 is a VCR servo interface IC th a t can be used in conjunction with the LC7412, 7413 to form a servo system w ith a good cost performance. Functions • Drum FG amp

2905a

Abstract: ic 2905a 2904a 2906A 2907A A1290 2N2904A 2n 2905a
Contextual Info: 2N 2904A 2N 2905A 2N 2906A SILICON PLANAR PNP ai2907‘ G E N E R A L PURPOSE A M P LIF IE R S A N D SWITCHES The 2N 2904A, 2N 290EÎA, 2N 2906A and 2N 2907A are silicon planar epitaxial PNP tran­ sistors in Jedec T O - 39 for 2N 2904A and 2N 2905A and in Jedec TO -18 (for 2N 2906A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PA CKAGE T O -18 T O 206A A 18 D E V IC E TY PE ^C E O Ic sus VOLTS (m ax ) A M PS 2N 2906 40 2N 2906A ^FE @ y ^C E VcE(sat) m in /m ax @ m A /V @ Ic^B V @ m A /m A 0.6 40/120@ 150/10 60 0.6 2N 2907

Contextual Info: 2906A Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)0.8 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

2905a

Abstract: ic 2905a 2904a 2907A 2907 a12907 2N2907A 2808a 2904 2906A
Contextual Info: 2N 2904A 2N 2905A 2N 2906A SILICON PLANAR PNP a' 2” 7* GENERAL PURPOSE AM PLIFIERS AND SWITCHES The 2N 2904A, 2N 2905A, 2N 2906A and 2N 2907A are silicon planar epitaxial PN P tran­ sistors in Jedec T O - 39 for 2N 2904A and 2N 2905A and in Jedec T O -18 (for 2N 2906A

mmbt2906a

Abstract: MMBTL51 MMBT2904A
Contextual Info: ^Sem iconductor SEMICOND Surface Mount Transistors General Purpose Amplifiers and Switches—PNP MMBT 2904 TO-236 49 60 40 5 MMBT2904A TO-236 (49) 60 40 5 TO-236 (49) 60 MMBT2905A TO-236 (49) 60 MMBT 2906 TO-236 (49) 60 MMBT 2906A TO-236 (49) 60 MMBT 2905

2907A

Abstract: 2906A maximum current rating of 2907A pnp transistor 2907a transistor
Contextual Info: 2906A, 2907A PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching ft JL max.Q50 5* 125 Plastic case ~ JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm Absolute Maximum Ratings

2N3546

Abstract: 2N3135 2N3241 2N3242 2N3550 2N3545
Contextual Info: Small Signal Transistors TO-18 Case Continued T Y P E N O. 2N2896 2N2897 2 N 2906A 2N 2907A 2N2952 D ESC R IPTIO N NPN AM PL/SWITCH NPN AMPUSWITCH hi =E BVC BO BVCEO BVEBO C BO VCBO (V ) (V ) (V ) (m A ) MIN MIN MIN MAX 'IC E S “ IC E V 140 90 7.0 .

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

transistor 3504 npn

Abstract: 026 pnp
Contextual Info: JEDEC TRANSISTORS continued a. >1- S' > o LÜ O > a t/t e X «O e < _u LU > X SO C E X < e o (O £ +r-e • lA Ui ÜJ I< oc O Ü. o > ÍT a. X ta £ o o n o o o ir> C-vl II ra h- @ PACKAGE P O L A R IT Y LU fT min (MHz) High speed saturated switches f B

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

Contextual Info: DSEP 29-06A DSEP 29-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V = 30/35 ns trr with soft recovery VRSM VRRM V V 600 600 600 600 Type A C TO-220 AC C DSEP 29-06A DSEP 29-06B A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM Conditions

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

BEL100N

Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
Contextual Info: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218

RN1901AFS

Abstract: RN1906AFS RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS marking D5 TOSHIBA
Contextual Info: RN2901AFS~2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, 2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Contextual Info: RN2901AFS~2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, 2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Contextual Info: DSEA 29-06AC DSEC 29-06AC HiPerDynFREDTM Epitaxial Diode ISOPLUS220 IFAV = 2x15 A VRRM = 600 V trr = 35 ns TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 600 600 DSEA ISOPLUS220TM E153432 Type 1 DSEC 2 DSEA29-06AC DSEC 29-06AC

dsep 2x91-03a

Abstract: DSEC 240-04A DSEP 2X31-12A dsep 12-12a 2x61-06A
Contextual Info: 3= J- HiPerFRED Diodes Kl V RRM '1f a v @ T1 c d=0.5 V ► N ew K3 DSEP. DSEE. lFAV = 8 - 2x120 A Type T ^FSM VF @ 10 ms m ax. A °C 45°C A V lF = 150°C A t rr ^RM @ - d i / d t typ- typ. TVJ=25 °C ns A T V, DSEC. ^VJM ^thJC DSEP 2x. o = 100°C

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.