NDS8435A Search Results
NDS8435A Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NDS8435A | Fairchild Semiconductor | Single P-Channel Enhancement Mode Field Effect Transistor | Original | 76.5KB | 6 | ||
| NDS8435A | Fairchild Semiconductor | Single P-Channel Enhancement Mode Field Effect Transistor | Original | 334.43KB | 10 | ||
| NDS8435A | Fairchild Semiconductor | Single P-Channel Enhancement Mode Field Effect Tra | Original | 198.23KB | 7 | ||
| NDS8435A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| NDS8435A | Fairchild Semiconductor | Single P-Channel Enhancement Mode Field Effect Transistor | Scan | 180.72KB | 6 | ||
| NDS8435A_NL | Fairchild Semiconductor | Single P-Channel Enhancement Mode Field Effect Transistor | Original | 198.22KB | 7 |
NDS8435A Price and Stock
FAIRCHILD NDS8435ATrans MOSFET P-CH 30V 7.9A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS8435A | 87,452 | 284 |
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| NDS8435A | 32,328 | 284 |
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| NDS8435A | 3,985 | 284 |
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| NDS8435A | 2,500 | 284 |
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onsemi NDS8435A- Tape and Reel (Alt: NDS8435A) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS8435A | Tape & Reel | 2,500 |
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Fairchild Semiconductor Corporation NDS8435ATrans MOSFET P-CH 30V 7.9A 8-Pin SOIC T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS8435A | 3,589 |
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NDS8435A | 4,661 |
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| NDS8435A | 1,040 |
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| NDS8435A | 11 |
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NDS8435A | 126,265 | 1 |
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National Semiconductor Corporation NDS8435ATRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7.9A I(D),SO |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDS8435A | 2,000 |
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| NDS8435A | 14 |
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NDS8435A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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8435aContextual Info: M a rc h 1 9 9 7 SEM ICONDUCTO R tm NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description SO-8 P-Channel enhancement mode power field effect • -7.9 A, -30 V. R ^ , = 0.023 O @ VGS = -10 V R ^ , = 0.035 0 @ V GS= -4.5V. |
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nds8435as8435a8435a | |
NDS8435AContextual Info: March 1997 SEMICDNDUCTOR tm NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description S O -8 P -C h a n n e l enhancem ent m ode power field effect • -7 .9 A, -3 0 V . R DS ON = 0 .0 2 3 @ V QS = -1 0 V R DS(ON) = 0 .0 3 5 |
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nds8435a | |
NDS8435AContextual Info: March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is |
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Contextual Info: March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is |
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nds8435a | |
NDS8435AContextual Info: March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is |
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nds8435a | |
NDS8435A
Abstract: 79A8
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Contextual Info: RAIRCHII-D SEM IC ONDUCTO R March 1997 tm NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement Features mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is |
OCR Scan |
nds8435a | |
CBVK741B019
Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8435A
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nds8435acbvk741b019f011f63tnr+3 | |
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Contextual Info: 19-1293; Rev 1; 11/07 MAX1649 Evaluation Kit The MAX1649 evaluation kit EV kit provides a regulated 5V output voltage from a 5.5V to 16.5V source. The circuit is configured to deliver up to 1.5A of output current using all surface-mount components. The MAX1649’s low quiescent current and unique currentlimited PFM control scheme provide high efficiency |
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max1649max1651max649max651+3 | |
601lt
Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
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s8426anqs8426tnds8425nds8926+14 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
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2n7000irf7203fds9435a2n7002+14 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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uf4003uf4004uf4005uf4006+16 | |
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STM9435
Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
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stu3055l2apm2034nustu4030nlapm2512nu+15 | |
microcontroller interface code
Abstract: avx tpsv107 FDS9435A data ADAPTER circuit AC TO DC 19v intelligent pulse battery charger schematics charger notebook AB-18 FAN5201 SSOP24 charger circuit 10w
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fan5201ds30005052microcontroller interface codeavx tpsv107+7 | |
C2012X7R1H224KT
Abstract: C2012X7R1H104KT LR2010-01-R033 TPSE226K035R0200 MAX1873S LRC-LR2010-01-R033-F LMK212BJ105KG MAX1873 MAX1873TEEE LMK212BJ225MG
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max1873c2012x7r1h224ktc2012x7r1h104ktlr2010-01-r033+6 | |
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Contextual Info: Na l i o n a l Semiconductor D ecem ber 1 996 PRELIMINARY N D S 8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. |
OCR Scan |
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
semiconductor cross reference
Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
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stu3055l2apm2034nustu4030nlapm2512nu+15 | |
CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
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o-251/to-252o-220/to-263ot-23ot-223+13 | |
WSL2010R0500FEA
Abstract: MAX1649 MAX1649EVKIT-SO MAX1651 MAX649 MAX651 MAX652 TPSE686M020R0150 CDRH125NP-470MC VISHAY DALE RESISTORS
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max1649max1651max649max651+8 | |
HTGB
Abstract: FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912
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fairchil936bny001asi4412dysi4425dy+16 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |