Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4966 Search Results

    SI4966 Datasheets (6)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si4966DY
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    SI4966DY
    Vishay Dual N-Channel 2.5-V (G-S) MOSFET Original PDF 65.38KB 4
    Si4966DY
    Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF 64.2KB 4
    SI4966DY-T1
    Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF 64.2KB 4
    SI4966DY-T1-E3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8SOIC Original PDF 8
    SI4966DY-T1-GE3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8SOIC Original PDF 8
    SF Impression Pixel

    SI4966 Price and Stock

    Select Manufacturer

    Vishay Siliconix SI4966DY-T1-E3

    MOSFET, POWER, DUAL N-CH, VDSS 20V, RDS(ON) 0.019OHM, ID+/-7.1A, SO-8,PD 2W, VGS+/-12V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI4966DY-T1-E3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.12
    Get Quote
    Quest Components SI4966DY-T1-E3 60
    • 1 $3.48
    • 10 $3.48
    • 100 $1.91
    • 1000 $1.91
    • 10000 $1.91
    Buy Now

    Vishay Siliconix SI4966DY

    Trans MOSFET N-CH 20V 4.5A/3.5A 8-Pin SOIC N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4966DY 1,253
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components SI4966DY 2
    • 1 $3.72
    • 10 $3.72
    • 100 $3.72
    • 1000 $3.72
    • 10000 $3.72
    Buy Now
    Component Electronics, Inc SI4966DY 3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Vishay Siliconix SI4966DYT1

    Trans MOSFET N-CH 20V 4.5A/3.5A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4966DYT1 1,126
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Vishay Intertechnologies SI4966DY-E3

    Trans MOSFET N-CH 20V 4.5A/3.5A 8-Pin SOIC N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4966DY-E3 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Vishay Intertechnologies SI4966DYT1E3

    DUAL N-CHANNEL 2.5-V (G-S) MOSFET Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4966DYT1E3 1,685
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    SI4966 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4966dy2002/95/ecsi4966dy-t1-e3si4966dy-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8


    Original
    si4966dysi4966dy-t1si4966dy-t1--e3s-50695--rev+118-apr-05 PDF

    Si4966DY

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original
    si4966dytemperature50s-54939--rev29-sep-97 PDF

    Si4966DY

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original
    si4966dystorag50s-54939--rev29-sep-97 PDF

    Si4966DY

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2


    Original
    si4966dy08-apr-05 PDF

    Si4966DY

    Contextual Info: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET


    Original
    si4966dys-54939--rev29-sep-97 PDF

    Si4966DY

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2


    Original
    si4966dy PDF

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4966dy2002/95/ecsi4966dy-t1-e3si4966dy-t1-ge3+22011/65/eu12-mar-12 PDF

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan
    si4466dysi4966dysi9925dysi9942dy+162sk1388t0220abirf7319irf7413irf7455irl2203nixfh26n60q2sk23332sk2761irf1405buz345bss89irfp250np9nb60irfp260n2sk2671 PDF

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4966dy2002/95/ecsi4966dy-t1-e3si4966dy-t1-ge3+111-mar-11 PDF

    3771

    Abstract: 8948 AN609 Si4966DY
    Contextual Info: Si4966DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si4966dyan60912-jan-063771+18948 PDF

    Si4966DY

    Abstract: Si4966DY-T1-E3
    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4966dy2002/95/ecsi4966dy-t1-e3si4966dy-t1-ge3+118-jul-08 PDF

    Si4966DY

    Contextual Info: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET


    Original
    si4966dys-54939--rev29-sep-97 PDF

    Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2


    Original
    si4966dy18-jul-08 PDF

    10MV1200AX

    Contextual Info: 19-2795; Rev 1; 5/05 Low-Cost, Wide Input Range, Step-Down Controllers with Foldback Current Limit The MAX8545/MAX8546/MAX8548 are voltage-mode pulse-width-modulated PWM , step-down DC-DC controllers ideal for a variety of cost-sensitive applications. They drive low-cost N-channel MOSFETs for both the


    Original
    max8545/max8546/max854810lumax10mv1200ax PDF

    Contextual Info: LTC1873 Dual 550kHz Synchronous 2-Phase Switching Regulator Controller with 5-Bit VID FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1873 is a dual switching regulator controller optimized for high efficiency with low input voltages. It includes


    Original
    ltc1873550khzltc1736ltc1753+2ltc19291873f PDF

    1702A

    Abstract: diode 1702A IR power mosfet switching power supply Thermal Shut Down Functioned MOSFET EEFUE0G181R FDS6670A LTC1702 LTC1702A MBR0520LT1 MBRS320T3
    Contextual Info: LTC1702A Dual 550kHz Synchronous 2-Phase Switching Regulator Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Pin Compatible with the LTC1702 with Improved Current Limit Control Two Sides Run Out-of-Phase to Minimize CIN No External Current Sense Resistors


    Original
    ltc1702a550khzltc170224-pin+11ltc1876ltc19291702af1702adiode 1702air power mosfet switching power supplythermal shut down functioned mosfeteefue0g181rfds6670ambr0520lt1mbrs320t3 PDF

    MSM586SEV

    Abstract: SI4966DY U-152 MSM586-SEV
    Contextual Info: APPLICATION NOTE 099 5V on ISA BUS is not available From: Dar Product: MSM586SEV / SEN To: Support Version: V2.1 Date: 15.01.2002 BIOS: - Who has issued this problem description: DLAG Support The problem description: The 5V on the ISA BUS are missing. The Application Fix Report:


    Original
    msm586sevsi4966dyj48/pin2app\app-099+3app-099u-152msm586-sev PDF

    Contextual Info: 19-2795; Rev 2; 6/07 Low-Cost, Wide Input Range, Step-Down Controllers with Foldback Current Limit The MAX8545/MAX8546/MAX8548 are voltage-mode pulse-width-modulated PWM , step-down DC-DC controllers ideal for a variety of cost-sensitive applications. They drive low-cost n-channel MOSFETs for both the


    Original
    max8545/max8546/max8548 PDF

    AD91018

    Abstract: ibm usa 2001 P6 MOTHERBOARD TRANSISTOR A107 Transistor HA17 bjt transistor c243 capacitor E4 2200uF 16V 8061 intel hp 530 motherboard power supply solution hp 530 motherboard circuit and solution C328
    Contextual Info: Intel 820 Chipset Design Guide July 2000 Order Number: 290631-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability


    Original
    ad91018ibm usa 2001 p6 motherboardtransistor a107transistor ha17+6bjt transistor c243capacitor e4 2200uf 16v8061 intelhp 530 motherboard power supply solutionhp 530 motherboard circuit and solutionc328 PDF

    intel 945 motherboard schematic diagram

    Abstract: Tablet PC R116 schematic PC intel 945 MOTHERBOARD schematic intel 945 crb schematic intel chipset 945 motherboard PC intel 945 MOTHERBOARD mosfet used in CIRCUIT atx 400 pnf Intel 855PM Odem ICH4-M temperature controlled fan project using thermister Intel 945 mother board diagram
    Contextual Info: R Intel 855PM Chipset Platform Design Guide For use with Intel Pentium M and Intel Celeron M Processors ® ® ® ® May 2004 Revision Number 003 Document Number: 252614-003 R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original
    855pmintel 945 motherboard schematic diagramtablet pc r116 schematicpc intel 945 motherboard schematic+7intel 945 crbschematic intel chipset 945 motherboardpc intel 945 motherboard mosfet used in circuitatx 400 pnfintel 855pm odem ich4-mtemperature controlled fan project using thermisterintel 945 mother board diagram PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor PDF

    1702 NPN transistor

    Abstract: Thermal Shut Down Functioned MOSFET EEFUE0G181R FDS6670A LTC1702 LTC1702C MBR0520LT1 MBRS320T3 si9402
    Contextual Info: LTC1702 Dual 550kHz Synchronous 2-Phase Switching Regulator Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1702 is a dual switching regulator controller optimized for high efficiency with low input voltages. It includes two complete, on-chip, independent switching regulator


    Original
    ltc1702550khzltc1873ltc1929+91702f1702 npn transistorthermal shut down functioned mosfeteefue0g181rfds6670altc1702cmbr0520lt1mbrs320t3si9402 PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original
    2n7000irf7203fds9435a2n7002+14ot-23irf7204nds8434abs170mosfet cross referencesmp40n06smp75n06-08si9952dysmp60n03-10lirfz44 to-263si9948dyirf1010e equivalentirll014nndt3055l PDF