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    CEF02N6 Search Results

    CEF02N6 Datasheets (3)

    Chino-Excel Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEF02N6
    Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF 42.35KB 5
    CEF02N6
    Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF 84.32KB 4
    CEF02N6A
    Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF 86.56KB 4

    CEF02N6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEF02N6A

    Abstract: CEF02N6A equivalent CEP02N6 CEF02N6 CEP02N6A CEB02N6A CEI02N6A
    Contextual Info: CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6A 650V 7.5Ω 1.5A 10V CEB02N6A 650V 7.5Ω 1.5A 10V CEI02N6A 650V 7.5Ω 1.5A 10V CEF02N6A 650V 7.5Ω 1.5A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original
    cep02n6a/ceb02n6acei02n6a/cef02n6acep02n6aceb02n6a+9cei02n6acef02n6ao-220o-263o-262o-220fcef02n6a equivalentcep02n6cef02n6 PDF

    CEF02N6

    Contextual Info: CEF02N6 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 1.5A , RDS ON =5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole


    Original
    cef02n6o-220f PDF

    CEB02N6G

    Abstract: CEF02N6 CEF02N6G
    Contextual Info: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS CEP02N6G 600V RDS ON 5Ω 2.2A ID @VGS 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original
    cep02n6g/ceb02n6gcef02n6gcep02n6gceb02n6g+5o-263o-220o-220fo-220/263cef02n6 PDF

    CEF02N6

    Abstract: transistor cep02n6 CEP02N6 CEB02N6 CEI02N6
    Contextual Info: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original
    cep02n6/ceb02n6cei02n6/cef02n6cep02n6ceb02n6+7cei02n6cef02n6o-220o-263o-262o-220ftransistor cep02n6 PDF

    CEP02N6

    Abstract: CEF02N6 transistor cep02n6 CEB02N6 CEI02N6
    Contextual Info: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original
    cep02n6/ceb02n6cei02n6/cef02n6cep02n6ceb02n6+7cei02n6cef02n6o-220o-263o-262o-220ftransistor cep02n6 PDF

    CEF02N65D

    Abstract: CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02
    Contextual Info: CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N65D 650V 6.9Ω 2A 10V CEB02N65D 650V 6.9Ω 2A 10V CEF02N65D 650V 6.9Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original
    cep02n65d/ceb02n65dcef02n65dcep02n65dceb02n65d+11o-263o-220o-220fo-220/263cef02n65cef*02n65dcep02n6cef02n6ceb02n6692adcep02 PDF

    CEF02N6G

    Abstract: CEB02N6G
    Contextual Info: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6G 600V 5.5Ω 2A 10V CEB02N6G 600V 5.5Ω 2A 10V CEF02N6G 600V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original
    cep02n6g/ceb02n6gcef02n6gcep02n6gceb02n6g+5o-263o-220o-220fo-220/263100ms PDF

    cef02n6a

    Abstract: CEP02N6A CEF02N6A equivalent CEB02N6A 56d41 CEP02N6 CEF02N6 56D4-1
    Contextual Info: CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON CEP02N6A 600V 8.5Ω 1.4A ID @VGS 10V CEB02N6A 600V 8.5Ω 1.4A 10V CEF02N6A 600V 8.5Ω 1.4A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original
    cep02n6a/ceb02n6acef02n6acep02n6aceb02n6a+10o-263o-220o-220fo-220/263100mscef02n6a equivalent56d41cep02n6cef02n656d4-1 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original
    o-251/to-252o-220/to-263ot-23ot-223+13ot-892928-8jo-220fmcep50n06cep83a3 equivalentcep83a3cef02n6acep6355fqpf8n60c equivalentcef04n6 equivalentcep63a3cep20n06cep76139 PDF