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    CEB02N6G

    Abstract: CEF02N6 CEF02N6G
    Contextual Info: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS CEP02N6G 600V RDS ON 5Ω 2.2A ID @VGS 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cep02n6g/ceb02n6gcef02n6gcep02n6gceb02n6g+5o-263o-220o-220fo-220/263cef02n6 PDF

    CEF02N6G

    Abstract: CEB02N6G
    Contextual Info: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6G 600V 5.5Ω 2A 10V CEB02N6G 600V 5.5Ω 2A 10V CEF02N6G 600V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cep02n6g/ceb02n6gcef02n6gcep02n6gceb02n6g+5o-263o-220o-220fo-220/263100ms PDF