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    CEP02 Search Results

    CEP02 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEP02N6
    		Chino-Excel Technology N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF 73.33KB 5
    CEP02N6A
    		Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF 86.56KB 4
    CEP02N7
    		Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF 85.9KB 4
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    CEP02 Price and Stock

    Balluff Inc

    Balluff Inc BCS0051 (BCS R08RR01-PSM80C-EP02)

    SENSOR, CAPACITIVE, 16X34X8 MM, FLUSH, PP, 8MM, PNP, NO, 2M CABLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BCS0051 (BCS R08RR01-PSM80C-EP02) Bulk 13 3 Weeks 1
    • 1 $102.63
    • 10 $102.63
    • 100 $102.63
    • 1000 $102.63
    • 10000 $102.63
    		Buy Now

    Balluff Inc BCS008K (BCS R08RR01-NSMFAC-EP02)

    SENSOR, CAPACITIVE, 16X34X8 MM, FLUSH SMARTLEVEL 15, PP, NPN, NO, 2M PUR CABLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BCS008K (BCS R08RR01-NSMFAC-EP02) Bulk 12 1
    • 1 $205.66
    • 10 $205.66
    • 100 $205.66
    • 1000 $205.66
    • 10000 $205.66
    		Buy Now

    Balluff Inc BCS008J (BCS R08RR01-POMFAC-EP02)

    CAPACITIVE PROXIMITY SENSOR, RECTANGULAR,0.5-6MM, DC, PNP-NC, CABLE 3WIRE, SHIELDED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BCS008J (BCS R08RR01-POMFAC-EP02) Bulk 9 1
    • 1 $205.66
    • 10 $205.66
    • 100 $205.66
    • 1000 $205.66
    • 10000 $205.66
    		Buy Now

    Balluff Inc BCS012H (BCS R08RRE-PSMFHC-EP02)

    CAPACITIVE PROXIMITY SENSOR, RECTANGULAR,0.5-6MM, DC, PNP-NO, CABLE 4WIRE, SHIELDED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BCS012H (BCS R08RRE-PSMFHC-EP02) Bulk 8 1
    • 1 $217.80
    • 10 $217.80
    • 100 $217.80
    • 1000 $217.80
    • 10000 $217.80
    		Buy Now

    Balluff Inc BCS002Z (BCS M12T4G1-PSM40C-EP02)

    BCS - CAPACITIVE SENSORS BCS M12T4G1-PSM40C-EP02, BCS SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BCS002Z (BCS M12T4G1-PSM40C-EP02) Bulk 7 1
    • 1 $283.75
    • 10 $283.75
    • 100 $283.75
    • 1000 $283.75
    • 10000 $283.75
    		Buy Now
    Find more CEP02 price and stock on Findchips.com

    CEP02 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEB02N6

    Contextual Info: CEP02N6/CEB02N6 ELECTRICAL CHARACTERISTICS TC=25 C unless otherwise noted Parameter Min Typ Max Unit Condition Symbol DYNAMIC CHARACTERISTICS b Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ


    Original     		CEP02N6/CEB02N6 CEB02N6 PDF

    CEF02N6A

    Abstract: CEF02N6A equivalent CEP02N6 CEF02N6 CEP02N6A CEB02N6A CEI02N6A
    Contextual Info: CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6A 650V 7.5Ω 1.5A 10V CEB02N6A 650V 7.5Ω 1.5A 10V CEI02N6A 650V 7.5Ω 1.5A 10V CEF02N6A 650V 7.5Ω 1.5A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A CEP02N6A CEB02N6A CEI02N6A CEF02N6A O-220 O-263 O-262 O-220F CEF02N6A CEF02N6A equivalent CEP02N6 CEF02N6 CEP02N6A CEB02N6A CEI02N6A PDF

    cef02n7g

    Abstract: CEF02N7 cef*02N7
    Contextual Info: CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP02N7G Type 700V 6.75Ω 2A 10V CEB02N7G 700V 6.75Ω 2A 10V CEF02N7G 700V 6.75Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N7G/CEB02N7G CEF02N7G CEP02N7G CEB02N7G O-263 O-220 O-220F O-220/263 cef02n7g CEF02N7 cef*02N7 PDF

    CEF02N7

    Abstract: cef*02N7 CEI02N7 CEP02N7 CEB02N7 CEI02N7/CEF02N7
    Contextual Info: CEP02N7/CEB02N7 CEI02N7/CEF02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N7 700V 6.6Ω 1.9A 10V CEB02N7 700V 6.6Ω 1.9A 10V CEI02N7 700V 6.6Ω 1.9A 10V CEF02N7 700V 6.6Ω 1.9A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N7/CEB02N7 CEI02N7/CEF02N7 CEP02N7 CEB02N7 CEI02N7 CEF02N7 O-220 O-263 O-262 O-220F CEF02N7 cef*02N7 CEI02N7 CEP02N7 CEB02N7 CEI02N7/CEF02N7 PDF

    CEP02N6

    Abstract: CEB02N6 transistor cep02n6
    Contextual Info: CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 2A , RDS ON =5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		CEP02N6/CEB02N6 O-220 O-263 CEP02N6 CEB02N6 transistor cep02n6 PDF

    CEB02N6G

    Abstract: CEF02N6 CEF02N6G
    Contextual Info: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS CEP02N6G 600V RDS ON 5Ω 2.2A ID @VGS 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N6G/CEB02N6G CEF02N6G CEP02N6G CEB02N6G O-263 O-220 O-220F O-220/263 CEB02N6G CEF02N6 CEF02N6G PDF

    CEF02N6

    Abstract: transistor cep02n6 CEP02N6 CEB02N6 CEI02N6
    Contextual Info: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEP02N6 CEB02N6 CEI02N6 CEF02N6 O-220 O-263 O-262 O-220F CEF02N6 transistor cep02n6 CEP02N6 CEB02N6 CEI02N6 PDF

    CEP02N6

    Abstract: CEF02N6 transistor cep02n6 CEB02N6 CEI02N6
    Contextual Info: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEP02N6 CEB02N6 CEI02N6 CEF02N6 O-220 O-263 O-262 O-220F CEP02N6 CEF02N6 transistor cep02n6 CEB02N6 CEI02N6 PDF

    CEF02N65D

    Abstract: CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02
    Contextual Info: CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N65D 650V 6.9Ω 2A 10V CEB02N65D 650V 6.9Ω 2A 10V CEF02N65D 650V 6.9Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N65D/CEB02N65D CEF02N65D CEP02N65D CEB02N65D O-263 O-220 O-220F O-220/263 CEF02N65D CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02 PDF

    CEF02N6G

    Abstract: CEB02N6G
    Contextual Info: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6G 600V 5.5Ω 2A 10V CEB02N6G 600V 5.5Ω 2A 10V CEF02N6G 600V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N6G/CEB02N6G CEF02N6G CEP02N6G CEB02N6G O-263 O-220 O-220F O-220/263 100ms CEF02N6G CEB02N6G PDF

    cef02n7

    Abstract: cef*02N7 CEP02N7 CEI02N7 CEB02N7
    Contextual Info: CEP02N7/CEB02N7 CEI02N7/CEF02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N7 700V 6.6Ω 1.9A 10V CEB02N7 700V 6.6Ω 1.9A 10V CEI02N7 700V 6.6Ω 1.9A 10V CEF02N7 700V 6.6Ω 1.9A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N7/CEB02N7 CEI02N7/CEF02N7 CEP02N7 CEB02N7 CEI02N7 CEF02N7 O-220 O-263 O-262 O-220F cef02n7 cef*02N7 CEP02N7 CEI02N7 CEB02N7 PDF

    cef02n6a

    Abstract: CEP02N6A CEF02N6A equivalent CEB02N6A 56d41 CEP02N6 CEF02N6 56D4-1
    Contextual Info: CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON CEP02N6A 600V 8.5Ω 1.4A ID @VGS 10V CEB02N6A 600V 8.5Ω 1.4A 10V CEF02N6A 600V 8.5Ω 1.4A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N6A/CEB02N6A CEF02N6A CEP02N6A CEB02N6A O-263 O-220 O-220F O-220/263 100ms cef02n6a CEP02N6A CEF02N6A equivalent CEB02N6A 56d41 CEP02N6 CEF02N6 56D4-1 PDF

    CEF02N7G

    Abstract: cef*02N7
    Contextual Info: CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES VDSS RDS ON ID @VGS CEP02N7G Type 700V 6.75Ω 1.9A 10V CEB02N7G 700V 6.75Ω 1.9A 10V CEF02N7G 700V 6.75Ω 1.9A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP02N7G/CEB02N7G CEF02N7G CEP02N7G CEB02N7G O-263 O-220 O-220F O-220/263 CEF02N7G cef*02N7 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF